JANTX1N4983US Allicdata Electronics
Allicdata Part #:

JANTX1N4983USS-ND

Manufacturer Part#:

JANTX1N4983US

Price: $ 8.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Semtech Corporation
Short Description: 110V ZENER 500W
More Detail: Zener Diode
DataSheet: JANTX1N4983US datasheetJANTX1N4983US Datasheet/PDF
Quantity: 1000
250 +: $ 7.50540
Stock 1000Can Ship Immediately
$ 8.34
Specifications
Series: *
Part Status: Active
Description

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The JANTX1N4983US is a Zener Silicon Planar Diode, commonly referred to as a Zener diode. It is intended for use in general purpose power rectifiers and is ideal for applications that require the highest speed and reliability. This particular device can be used in a variety of applications, such as in power supplies, automotive electronics, telecommunication circuits, LED drive circuits, and anti-protection circuits. This article will discuss the application field and working principle of the JANTX1N4983US.

Application field

The JANTX1N4983US is a silicon planar semiconductor diode that is capable of passing current in reverse bias. This device is capable of blocking voltage up to 140V, making it suitable for many different applications. It has a maximum reverse leakage current of 10µA. As stated previously, this device is suitable for a number of automotive, telecommunications, and other applications. Additionally, this device can be used in anti-protection circuits, LED drive circuits, and power supplies.

Working Principle

The JANTX1N4983US is a diode with a built in Zener junction. A Zener diode is a type of diode that is designed to pass current in the reverse direction. This occurs when the reverse voltage applied to the diode exceeds a certain value known as the Zener voltage. When this occurs, a low resistance path is established, allowing current to flow in the reverse direction.

The JANTX1N4983US utilizes an electro-static layer on top of the silicon planar diode for a higher breakdown voltage. This layer consists of an oxide-nitride-oxide (ONO) layer, which increases the device’s maximum operating temperature to 175°C. Additionally, the JANTX1N4983US utilizes a high-quality diffusion process to produce a tight Zener voltage specification.

The working principle of the JANTX1N4983US involves the flow of electrons through the diode when a reverse voltage is applied to the anode and cathode. When reversed, the applied voltage exceeds the Zener voltage and the high electric fields of the devices creates a low resistance path. This low resistance path allows electrons to flow through the device, resulting in a flow of current in the reverse direction. This process is known as “Zener breakdown.”

Conclusion

In conclusion, the JANTX1N4983US is a Zener Silicon Planar Diode that is intended for use in a variety of applications. It is capable of blocking voltage up to 140V and can be used in automotive, telecommunication, and power supply applications. Additionally, it utilizes an ONO layer for higher breakdown voltage, and has a tight Zener voltage specification. The working principle of the JANTX1N4983US involves the creation of a low resistance path when a reverse voltage is applied to the diode, which allows electrons to flow through the device and establish a current in the reverse direction.

The specific data is subject to PDF, and the above content is for reference

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