JANTX1N4989C

Series:	Military, MIL-PRF-19500/435
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	200V
Tolerance:	±2%
Power - Max:	5W
Impedance (Max) (Zzt):	500 Ohms
Current - Reverse Leakage @ Vr:	2µA @ 152V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 1A
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	E, Axial
Supplier Device Package:	E, Axial

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Diodes - Zener - Single - JANTX1N4989C Application Field and Working Principle

The JANTX1N4989C is a single Zener diode with a low-noise and low-impedance design. It is commonly used in high-frequency switching applications such as RF switching, HV switches and in medical electronics. This diode also includes a low-noise noise-tolerance circuit set-up to reduce RF interference levels. Furthermore, it is capable of operating as a regulator to stabilize output voltage levels despite changes in current load or input voltage.

General Characteristics and Structure

The JANTX1N4989C diode is a type of semiconductor device designed for rectification, construction, and protection. It consists of two PN junction layers constructed from Silicon and has a Silicon substrate. The Silicon substrate has a negative doping concentration which is usually much higher than the doping found in the junction layers. This enables the diode to maintain a low-impedance state even when operating in a high-voltage environment.In terms of dimension, the JANTX1N4989C diode measures 3.2mm in diameter and 1mm in thickness. In its operating environment, the diode can handle up to 20V DC and can endure an operating temperature range of -65 oC to +155 oC. The diode is available in axial leads, surface mount or through-hole packages.

Applications & Features

The most common application of the JANTX1N4989C is to regulate the output voltage level in a high voltage-switching applications, such as RF switching, HV switches and in medical electronics. Due to its low-impedance design, this diode can easily handle high-frequency signals without compromising on power quality. This makes it an ideal substitute for normally used rectifiers.It also has superior noise-tolerance characteristics when compared to a typical diode of same type. The JANTX1N4989C includes a low-noise noise-tolerance circuit set-up to reduce RF interference levels. Additionally, the low-impedance design of the diode ensures that the output voltage level is stable, regardless of changes in current load or input voltage. The diode also offers a number of other benefits, including high-temperature operation, low forward voltage drop, and low reverse leakage current.

Working Principle

The JANTX1N4989C diode operates by means of rectifying and protection action. This is done using its relatively high doping concentration of the Silicon substrate, which reduces its impedance in high-voltage environments.When a voltage is applied across the diode, the forward current flow is allowed through the device. This happens mainly because of the positive charge applied to the PN junction layers when applying a voltage. When the applied voltage reaches the break-point of the PN junction, current flow through the diode causes a process called “Zener Breakdown”. This causes the voltage applied to the charged PN junction to decrease down to the “Zener” voltage value. This effect stabilizes the output voltage level, allowing the diode to regulate the output level in spite of any changes in input and load levels.Additionally, due to their low-impedance design, the JANTX1N4989C diode is suitable for RF switching applications. The low-noise noise-tolerance circuit set-up of the diode, assists in reducing any level of RF interference.

Conclusion

The JANTX1N4989C is a single Zener diode suitable for controlling, regulating and protecting high-voltage switching applications. It is designed for rectifying and protection with its relatively high doping concentration of the Silicon substrate, which ensures low-impedance in high-voltage environments. Additionally, the low-noise noise-tolerance circuit set-up of the diode, complements its ability to reduce any level of RF interference. The diode is also capable of maintaining output voltage stability, which makes it suitable for applications that require a stable output voltage level despite changes in input and load levels.

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