JANTX1N5540D-1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JANTX1N5540D-1 can be classified under Diodes - Zener - Single. It is capable of handling high power levels and is thus suitable for a wide range of applications. This circuit element is charcterized by its simple design and cost-effective implementation.

In terms of its application field, the JANTX1N5540D-1 is typically used as a series pass element, protecting loads from excessive input voltages. It is especially suitable for use in repetitive polarity power supplies and also finds application in transient voltage suppression circuits. The element is capable of delivering high surge current capability and low noise levels. It is therefore also used in power semiconductor switching circuits, where it helps to protect sensitive devices from overvoltage.

The JANTX1N5540D-1 works on a simple principle. It consists of two parallel zener diode structures which are connected in series with a resistor. The zener diode has a negative temperature coefficient, which increases the reverse breakdown voltage with an increase in temperature. When an overvoltage input exceeds the breakdown voltage, current starts to flow. The resistor limits the input current and dissipates the excess energy as heat.

The other important aspects of the JANTX1N5540D-1 are its protection level and its high power dissipation capability. The protection level can be adjusted by changing the value of the resistor, and the maximum dissipation of the element is specified as 2W. The technical parameters of the element are also specified according to their intended application range. For example, the maximum reverse leakage current is 0.1A at 25°C and the maximum forward voltage is 0.6V at 3A of forward current.

Overall, the JANTX1N5540D-1 is a highly reliable device which is suitable for a wide variety of applications. It delivers high surge current capability and low noise levels, making it particularly suitable for use in power semiconductor switching circuits. The simple design of the element and its cost-effective implementation make it attractive for multiple applications.

The specific data is subject to PDF, and the above content is for reference