Allicdata Part #: | 1086-15412-ND |
Manufacturer Part#: |
JANTX1N5550US |
Price: | $ 11.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 200V 5A B-MELF |
More Detail: | Diode Standard 200V 5A Surface Mount B, SQ-MELF |
DataSheet: | JANTX1N5550US Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 9.91963 |
Series: | Military, MIL-PRF-19500/420 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 9A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The JANTX1N5550US is a silicon epoxy-filled metal-sawn package, which is a single-phase, recessed gate surface-barrier rectifier of the Schottky type and is part of the diodes-rectifiers-single category. The device is intended for use in TV and other power supply applications where high performance and reliability are a primary consideration.
The device is constructed of conductive epoxy which is the base material and consists of a switchable anode and cathode surrounded by a protective encapsulant epoxy. The device employs an internal Schottky diode that produces a voltage step-down at its gate as the current passes through it. When the diode is fully energized, electrons flow through it, producing a voltage drop. This voltage drop can be used to reduce the voltage of the power supply.
The JANTX1N5550US can be used to reduce the voltage of a power supply from a higher value, such as 30 VDC to a much lower one, such as 3 VDC. The device is capable of switching currents with a range between 250 mA and 4 A. The device features a reverse recovery time of typically less than 4 μs, which enables a fast switching of the current. In addition to its fast switching speed, the device also has low forward voltage drop and very low turn-on and turn-off delays. This is enabled by having an internal Schottky diode that has widths of typically just a few nanometers.
In addition, the device also has low leakage current and low forward-voltage drop. The typical forward voltage drop of the device is 0.7V, with the maximum continuous current of 4A. Furthermore, the maximum peak forward voltage is 0.99V. As well, the maximum reverse current of 10A is comparable to other similar surface-barrier rectifiers available in the market.
To sum up, the JANTX1N5550US is an efficient switchable device designed for TV and power supply applications. Its internal Schottky diode produces a voltage step-down at its gates, reducing the voltage from one value to the minimum required. The device has low forward voltage drop, low turn-on and turn-off delays, low leakage current, and a maximum peak forward voltage of 0.99V. All of these features make it an optimal choice for reducing voltage in any power supply application.
The specific data is subject to PDF, and the above content is for reference
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