Allicdata Part #: | JANTX1N5811/TR-ND |
Manufacturer Part#: |
JANTX1N5811/TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | UFR,FRR |
More Detail: | Diode Standard 150V 3A Through Hole B, Axial |
DataSheet: | JANTX1N5811/TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/477 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 875mV @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 5µA @ 150V |
Capacitance @ Vr, F: | 60pF @ 10V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | B, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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JANTX1N5811/TR is a rectifier diode component with a single configuration. This component is designed to prevent power losses and regulate voltage within electronic circuits. It is used in a myriad of electronic applications, including voltage regulation, power oscillation damping, and over-current protection.
The JANTX1N5811/TR diodes are made with a high-quality silicon substrate and feature an extremely low forward voltage drop and a high-speed switching capability.
The component offers three different power rating levels, depending on the desired application. These levels included 400mA, 600mA and 800mA.
Its operating temperature range is from -25°C to 125°C, with an average life time of 3000 hours at a temperature of of 25°C.
The component has an impressive low junction capacitance of 2.5pF (junction to case) and 3.2pF (junction to ground). Additionally, it has a very low internal thermal resistance (1.4°C/W) for unparalleled thermal performance.
The JANTX1N5811/TR has a variety of application fields, including over-current protection and voltage regulation. The component’s low forward voltage drop helps regulate the current and prevents circuit damage.
The component also prevents power oscillations, which can occur when two or more electric components share a similar power source and need regulating. The JANTX1N5811/TR is designed to absorb and regulate these oscillations before they can cause damage to electronic circuits.
In addition to its power regulation capabilities, the component is capable of providing efficient electrostatic discharge (ESD) protection. Its construction has integrated ESD diodes across the silicon die, protecting internal and external components from hazardous static electricity build-up.
The component has a very simple working principle. The component is essentially two p-n junctions connected in series. When a current is applied, a potential difference is created across the two junctions. This allows current to travel from one junction to the other, but not in the opposite direction.
As the current travels from one junction to the other, it is "steered" by the potential difference, and does not flow directly from one junction to another. This process helps to protect electronic circuits and regulate the power levels in the circuit, preventing power losses and protecting components from damage.
The JANTX1N5811/TR diode is a high-quality single rectifier component that offers excellent performance and protection. Its low forward voltage drop, low internal thermal resistance, and integrated ESD protection make it an ideal choice for a variety of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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