JANTX1N6132A Allicdata Electronics

JANTX1N6132A Circuit Protection

Allicdata Part #:

1086-2571-ND

Manufacturer Part#:

JANTX1N6132A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 91.2V 165.1V AXIAL
More Detail: N/A
DataSheet: JANTX1N6132A datasheetJANTX1N6132A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Voltage - Clamping (Max) @ Ipp: 165.1V
Supplier Device Package: Axial
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 3A
Series: Military, MIL-PRF-19500/516
Voltage - Breakdown (Min): 114V
Voltage - Reverse Standoff (Typ): 91.2V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppressors) Diodes are semiconductor devices that protect electrical circuits from transient voltage surges. The JANTX1N6132A is a 200 W uni-directional TVS diode that offers low capacitance. It comes in DO-201 package type that is ideal for board level protection applications. The device is designed and manufactured using state-of-the-art semiconductor processing technology.

The JANTX1N6132A is primarily used to protect circuits that are subjected to power supply transient and lightning surges. The device offers optimal protection against over-voltage transients and lightning events such as those found in communication lines, automotive applications, and industrial equipment. It can also be used for protecting differential signal line pairs from transients of up to 200 watts per line.

The working principle of the JANTX1N6132A is based on the avalanche breakdown mechanism, which is a type of electrical breakdown that occurs when a current of electrons pass through a semiconductor diode in a high enough reverse voltage to produce an avalanche effect. This effect causes the current to increase rapidly, resulting in the diode becoming conducting in both directions with a high electrical conductivity. When the applied voltage is below the breakdown voltage, the current flowing through the diode is very small, making the diode behave like an open circuit. Once the voltage surpasses the breakdown voltage, the current will become significantly larger and the diode will act like a closed switch to protect the circuit.

The JANTX1N6132A is an ideal choice for the protection of sensitive circuit components, such as semiconductors and cables, that are often damaged by transients. It offers a fast response time, low clamping voltage, high peak pulse current capability, and a low capacitance structure that minimizes signal distortion. The device is also easy to install and requires very low power to operate.

In short, the JANTX1N6132A is an ideal solution for protecting against differential mode over-voltage transients and high power lightning events that often cause damage to sensitive electronic circuits. Its relatively low capacitance, fast response time, and high peak current capability make it suitable for a variety of applications, including automotive, communications, and industrial equipment.

The specific data is subject to PDF, and the above content is for reference

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