JANTX1N6349US Allicdata Electronics
Allicdata Part #:

1086-19947-ND

Manufacturer Part#:

JANTX1N6349US

Price: $ 14.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 110V 500MW B SQ-MELF
More Detail: Zener Diode 110V 500mW ±5% Surface Mount B, SQ-MEL...
DataSheet: JANTX1N6349US datasheetJANTX1N6349US Datasheet/PDF
Quantity: 1000
100 +: $ 13.27860
Stock 1000Can Ship Immediately
$ 14.76
Specifications
Series: Military, MIL-PRF-19500/533
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 500 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 84V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Description

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Introduction

The JANTX1N6349US is a single Zener diode designed for use in a wide range of electronic components. It is a low voltage Zener diode which is capable of operating at a maximum maximum reverse power rating of 400mW. The JANTX1N6349US is constructed from high-temperature silicone and is available in a 4-pin DIP package. It is designed for operate in the temperature range of -55°C to +125°C.

Application Field

The JANTX1N6349US is used in applications such as voltage regulation, reverse-current protection, and precision rectification, as well as in integrated circuits (IC’s) where the breakdown voltage needs to be tightly regulated. It can be used as a voltage regulator in computers, telecommunications, and other industrial equipment to maintain the optimum voltage level. The JANTX1N6349US is also used in the automotive industry as it can provide reliable and high power efficiency.

Working Principle

The JANTX1N6349US utilizes a reverse-breakdown mechanism which is known as Zener breakdown. Zener breakdown happens when a reverse current is applied to the diode. As the voltage increases, electrons become dislodged from their lattice sites and are driven into the “forbidden gap” of the diode. The gap, which can be either positive or negative, is known as the voltage-breakdown region. Once the electrons enter the gap, they are accelerated until they strike the P-N junction and give off energy in the form of light. This light is detected, allowing for a controlled breakdown voltage.

Conclusion

The JANTX1N6349US is a single Zener diode that can be used in a wide range of electronic components. With its high-temperature silicone construction and 4-pin DIP package, the JANTX1N6349US is capable of operating at a maximum reverse power rating of 400mW. It has many applications including voltage regulation, reverse-current protection, precision rectification, and use in IC’s. The JANTX1N6349US utilizes the reverse-breakdown principle known as Zener breakdown to operate. Overall, the JANTX1N6349US is a reliable and cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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