JANTX1N754CUR-1 Allicdata Electronics
Allicdata Part #:

1086-20183-ND

Manufacturer Part#:

JANTX1N754CUR-1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 6.8V 500MW DO213AA
More Detail: Zener Diode 6.8V 500mW ±2% Surface Mount DO-213AA
DataSheet: JANTX1N754CUR-1 datasheetJANTX1N754CUR-1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/127
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 5 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA
Description

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Diodes - Zener - Single

A Zener diode is an electronic component that is used for regulating and clipping voltages in various electrical and electronic circuits. The JANTX1N754CUR-1 is a silicon Zener diode specifically designed for better stabilization of voltage. It can be used in a wide range of applications such as in televisions and computer monitors, in automotive electronics, and in audio systems.

The JANTX1N754CUR-1 is a single diode which has a cutoff voltage of 5.4 volts. Cutoff voltage is the minimum value a diode can conduct current in the forward direction. Above this voltage, forward conduction occurs and the diode exhibits a linear increase in forward current with an increase in voltage. The reverse voltage is 7 volts and the peak inverse voltage is 75 volts.

The JANTX1N754CUR-1 includes features such as low temperature coefficient, flat voltage current characteristics, and low reverse leakage current. It is housed in a hermetically sealed glass package with a maximum power dissipation of 500 milliwatts (mW). It is suitable for high ripple current, voltage stabilization, and surge suppression applications.

The principle of operation of JANTX1N754CUR-1 is based on the PN junction diode. A PN junction is formed when a p-type material and an n-type material are joined together. When the two materials are connected in reverse bias (where the anode is connected to the negative terminal and the cathode to the positive terminal), the voltage increases until it reaches the reverse breakdown voltage of the junction. At this voltage, a large current passes through the junction and the diode enters a region known as the Zener breakdown region, also known as the avalanche region.

In the Zener breakdown region, the diode will conduct current both in the forward and reverse directions. As the applied voltages rises, the current in the forward direction will become constant and the Zener diode will be used to maintain a constant voltage across the junction. The resulting voltage is known as the Zener voltage and is equal to the junction’s reverse breakdown voltage.

The constant voltage across the junction can be used to regulate the output voltage of a power supply or to create a reference voltage. The Zener diode can also be used in voltage clamping circuits and as a voltage divider.

The JANTX1N754CUR-1 is an ideal choice for applications which require a reliable source of low voltage. It is designed for use in various applications such as voltage waveform shaping, voltage stabilization, voltage modulation, voltage protection and voltage sensing.

For applications which require higher performance, the JANTX1N754CUR-1 is an ideal part. It is designed for high reliability and is available in a wide range of package styles. It is a cost effective, reliable, and highly efficient part, making it an ideal choice for all types of voltage regulation, voltage stabilization, and voltage protection applications.

The specific data is subject to PDF, and the above content is for reference

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