JANTX2N2907AUB/TR

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Transistors - Bipolar (BJT) - Single

Introduction to JANTX2N2907AUB/TR

The JANTX2N2907AUB/TR is a N-Channel field effect transistor (FET) manufactured by Microsemi Corporation. Named in the Microsemi Series, JANTX (J Series), this FET offers improved frequency performance, on-state power dissipation, gate-source capacitance, and on-state resistance. It is perfect for use in hybrid and microwave analog circuits for applications such as voltage converters and amplifiers. The JANTX2N2907AUB/TR is specifically designed for use in mobile, automotive, and consumer electronics.

Description of the JANTX2N2907AUB/TR

The JANTX2N2907AUB/TR is a N-Channel FET with a breakdown voltage of 50 volts. It offers excellent frequency and on-state resistance performance, gate-source capacitance, and on-state power dissipation. The JANTX2N2907AUB/TR has a maximum drain current of 4 amps, a gate-source voltage of 25 volts, and a maximum source-drain diode voltage of 8 volts. The FET uses a P-J212 package.

Features of the JANTX2N2907AUB/TR

• N-Channel Field Effect Transistor
• 50 volts Breakdown Voltage
• 4 amps Maximum Drain Current
• 25 volts Gate-Source Voltage
• 8 volts Maximum Source-Drain Diode Voltage
• P-J212 Package

Applications of the JANTX2N2907AUB/TR

The JANTX2N2907AUB/TR is suitable for a wide range of applications, such as:

• Automotive Electronic Systems
• Voltage Converters
• High-Frequency Amplifiers
• Hybrid and Microwave Analog Circuits
• LED Lightening
• Portable Electronics
• Consumer Electronics

Working Principles of the JANTX2N2907AUB/TR

The working principle of the JANTX2N2907AUB/TR is based on Gate Oxide capacitance. In simple terms, this is a method of conduction that occurs between the gate and the drain of the FET. As the gate voltage is increased, the electric field increases and electrons are drawn away from the gate into the drain, thus allowing for a current flow. The amount of current depends on the magnitude of the gate voltage. This is what enables the FET to have excellent controlling characteristics, allowing for high-frequency performance.

Conclusion

The JANTX2N2907AUB/TR FET is a highly versatile device that is ideal for use in hybrid and microwave analog circuits. Its excellent frequency, on-state power dissipation, on-state resistance, and gate-source capacitance make it perfect for applications such as voltage converters and amplifiers. Its 50 volts breakdown voltage and maximum source-drain diode voltage of 8 volts make it suitable for use in a wide range of electronic devices in the automotive, consumer, and mobile electronics industries.

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