Allicdata Part #: | 1086-2691-ND |
Manufacturer Part#: |
JANTX2N2946A |
Price: | $ 13.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 35V 0.1A |
More Detail: | Bipolar (BJT) Transistor PNP 35V 100mA 400mW Thro... |
DataSheet: | JANTX2N2946A Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 12.16820 |
Series: | Military, MIL-PRF-19500/382 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 1mA, 500mV |
Power - Max: | 400mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-46-3 |
Supplier Device Package: | TO-46 (TO-206AB) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JANTX2N2946A is a type of bipolar junction transistor (BJT) with a single construction. It is specifically designed for use in various applications including switching and amplification. In this article, we\'ll discuss the main features of the JANTX2N2946A BJT, its applications and working principle.
The JANTX2N2946A is composed of three layers: the emitter, base and collector. The emitter is the lead that is connected directly to the base, while the collector connects the base to the output connection. The base acts as a ground connection between the emitter and collector, providing a control mechanism for controlling the current flow through the transistor.
In terms of physical dimensions, the JANTX2N2946A BJT comes in a small TO-92 package. The package dimensions are 5.0 x 4.3 x 2.0 mm. This makes the BJT ideal for applications where size constraints are in play. The maximum collector current is given by 65 mA, which makes it suitable for small signal applications such as amplifiers and switching.
The JANTX2N2946A transistor is most often used in amplifiers and switching applications. The main advantage of this BJT over other types of transistors is its lower power dissipation when used in these applications. This is due to its relatively low collector current, which in turn however, limits its applications to low power applications without the need for additional external components. This makes it suitable for use in low-power components such as radio circuits and amplifiers.
The working principle of a JANTX2N2946A BJT is fairly straightforward. In its most basic form, the transistor works by using a current applied to the base that is regulated by the amount of voltage applied to the collector. This voltage is called the forward bias voltage and it is used to control the current that is allowed to flow between the emitter and collector. In this way, the transistor acts as a switch, allowing current to flow in one direction and keeping it from flowing in the opposing direction.
That being said, one of the main advantages of using a BJT as opposed to other types of transistors is its high switching speed. This makes it suitable for use in high-speed application where there is a need for precision. Additionally, BJTs are much more reliable than MOSFETs and other types of transistors, making them ideal for use in long-term applications.
In summary, the JANTX2N2946A BJT is an excellent choice for use in many applications. It is small, reliable, and has a low power dissipation that makes it suitable for use in low-power systems. Additionally, its high switching speed and reliability make it ideal for use in high-speed signal applications. By understanding the features and working principle of the JANTX2N2946A BJT, it should be easy to choose it for your next project.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JANTXV1N6141A | Microsemi Co... | 38.35 $ | 1000 | TVS DIODE 6.9V 13.4V C AX... |
JANTX1N6103A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V AXIA... |
JANTX1N6103US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.76V B S... |
JANTX1N6104 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
JANTX1N6104AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V B SQ... |
JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...