JANTX2N3418S

Series:	Military, MIL-PRF-19500/393
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	5µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 1A, 2V
Power - Max:	1W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39 (TO-205AD)

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Introduction

JANTX2N3418S is a single-transistor bi-polar junction transistor (BJT). This type of transistor amplifies or switches electronic signals or electrical power. JANTX2N3418S has a wide range of applications, from general purpose power switching to small signal amplifying. Understanding the working principle and applications of JANTX2N3418S can make it easier to use in electronic projects and design solutions.

Application Field and Working Principle

The application field of JANTX2N3418S covers general purpose switching, amplification, and switching of digital signals. The JANTX2N3418S has a collector voltage of 75 volts and a collector current gain of 40. It also has a current gain band-width product of 4Hz minimum and a maximum junction temperature of 150°C.The JANTX2N3418S is a bipolar device with three terminals: the Collector (C), Base (B), and Emitter (E). To understand how a BJT works, it is useful to visualize a battery between the B and E terminals, which then causes a current from the collector to the emitter. The voltage between the Base and Emitter determines current flow from the Collector to the Emitter. A large current is developed at the collector, resulting in amplification of the signal.In a breakdown mode, the BJT can be used to open or close a switch. When off, the BJT isolates the collector from the emitter, and when on, the BJT allows current flow from the collector to the emitter. The JANTX2N3418S has an elevated collector-base breakdown voltage of 70 volts and a low collector-emitter voltage breakdown of 15 volts.Another application of JANTX2N3418S is small-signal amplifying. The BJT provides more current gain, more easily than metal-oxide semiconductor (MOS) transistors, but with a greater power dissipation. The BJT is better suited for amplifying small signals, due to its fast switching ability, along with an increased output current and increased power gain, compared to MOS transistors.

Conclusion

The JANTX2N3418S is an efficient, cost-effective transistor for a variety of applications. As an economical bi-polar transistor, it offers a wide range of applications from general purpose switch, amplification, to small-signal amplifying. Understanding the working principle and application fields of this single bi-polar transistor will assist the user with selecting the right device to fit the project need.

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