
Allicdata Part #: | 1086-20913-ND |
Manufacturer Part#: |
JANTX2N3766 |
Price: | $ 25.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 60V 4A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 4A 25W Through H... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 22.91960 |
Series: | Military, MIL-PRF-19500/518 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 100mA, 1A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 5V |
Power - Max: | 25W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-213AA, TO-66-2 |
Supplier Device Package: | TO-66 (TO-213AA) |
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.A JANTX2N3766 is a NPN silicon transistor with a power rating of 200V, 1A and a collector-emitter voltage of up to 50V. It is classified as a single bipolar junction transistor (BJT). It is suitable for general purpose amplifications, switching applications, and driver amplifications, and is manufactured in the TO-66 package. The JANTX2N3766 has a relatively high power rating, making it suitable for use in high-voltage, high-power circuit designs.
The basic operation of all transistors is the same, but transistors are divided into two major categories, BJTs and field-effect transistors (FETs). BJTs are further divided into two types, NPN and PNP. The JANTX2N3766 is an NPN transistor, meaning that current flows from the emitter to the collector when a voltage is applied to the base. The NPN type is generally used as an amplifier, and its basic diagram looks like this:
In this diagram, the arrow represents the direction of current flow, with the collector as the output and the base and emitter as inputs. A voltage applied to the base controls the current flowing from the emitter to the collector. This is the basic principle of BJT operation, and it allows for amplification of the input signal.
The key specifications of the JANTX2N3766 are its collector-emitter voltage and power rating. The collector-emitter voltage rating is up to 50V, which allows for use in high-voltage circuits. The power rating is up to 1A, which is relatively high for a small transistor. This makes the JANTX2N3766 suitable for use in high-power circuits, such as those used in automotive and industrial applications.
The JANTX2N3766 is primarily used for general-purpose amplification, switching applications, and driver amplifications. It is ideal for use in high-power circuits, as its high power rating allows it to handle large currents while maintaining a low power dissipation. It can also be used in low-power circuits, such as those found in consumer electronics, as it is able to amplify small signals while consuming little power.
In addition to amplification, the JANTX2N3766 can also be used as a switch. When a small voltage is applied to the base, the current flowing from the emitter to the collector will be large enough to activate the switch, which can then be used to turn other components on or off. This can be useful in controlling processes such as motor speed and supply regulation.
In summary, the JANTX2N3766 is a NPN silicon transistor with a power rating of 200V and 1A. It is suitable for high-voltage, high-power circuit designs and can be used for general-purpose amplification, switching applications, and driver amplifications. It has a relatively high power rating, making it ideal for use in high-power circuits. It can also be used in low-power circuits, as it is able to amplify small signals while consuming little power.
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