| Allicdata Part #: | 1086-20959-ND |
| Manufacturer Part#: |
JANTX2N4150 |
| Price: | $ 10.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 70V 10A TO-5 |
| More Detail: | Bipolar (BJT) Transistor NPN 70V 10A 1W Through H... |
| DataSheet: | JANTX2N4150 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 9.60687 |
| Series: | Military, MIL-PRF-19500/394 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 10A |
| Voltage - Collector Emitter Breakdown (Max): | 70V |
| Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 1A, 10A |
| Current - Collector Cutoff (Max): | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 5A, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package: | TO-5 |
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The JANTX2N4150 is a bipolar NPN transistor specifically designed for military and avionics applications. It has a maximum collector-emitter voltage of 150V and is packaged in a pin-out SOIC-8 for easy handling. It can be used as an amplifier in surface mount designs and is also suitable for portable electronic devices such as mobile phones and PDAs.
The JANTX2N4150 is a small signal transistor which means it is used for small current and low power applications. It operates in the 45 to 100mW power dissipation range and is rated at 20 volts in the collector-emitter breakdown voltage. It also has an excellent thermal resistance rating, making it suitable for high temperature environments. Furthermore, the device is encapsulated in a hermetic 8-lead package and meets MIL-STD 883 standards.
The JANTX2N4150 uses a base current to control a more powerful flow of collector current which controls the emitter current. The JANTX2N4150 is a current-controlled device and therefore exhibits current amplification. It operates according to a circuit commonly known as the common emitter configuration. The base current is amplified by the amplifier, thus increasing the current flow to the collector, which then amplifies the signal once again. The result is a high level of voltage gain, typically between 20 to 200.
Since the JANTX2N4150 is a bipolar transistor, it has two layers of semiconductor material. One layer is P-type, and the other is N-type. In the middle of both layers lies the substrate, which is made from a heavily doped N-type semiconductor material. When a voltage current is applied to the base of the transistor, it gets into the substrate and draws out electrons from the N-type material. This causes the voltage drop of the P-type layer to become lower than that of the N-type layer, resulting in the flow of current.
The JANTX2N4150 is used in many applications due to its high gain, excellent thermal resistance, good frequency response and low noise characteristics. It is commonly used as an amplifier in audio amplifiers, instrumentation amplifiers and switching power supplies. It is also used in linear and switched mode power supplies, communications systems and motor control circuits.
In summary, the JANTX2N4150 is a high gain bipolar NPN transistor specifically designed for military and avionics applications. Due to its excellent frequency response, thermal resistance, low noise and good current gain, it is suitable for a range of applications including audio, instrumentation, linear and switched mode power supplies, communications systems and motor control circuits. It is available in an easy to handle pin-out SOIC-8 package.
The specific data is subject to PDF, and the above content is for reference
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JANTX2N4150 Datasheet/PDF