JANTX2N4854U Allicdata Electronics
Allicdata Part #:

1086-16134-ND

Manufacturer Part#:

JANTX2N4854U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN/PNP 40V 0.6A 6SMD
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA ...
DataSheet: JANTX2N4854U datasheetJANTX2N4854U Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/421
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD
Description

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The JANTX2N4854U is a transistor device falling under the category of Bipolar Junction Transistor (BJT) Arrays. A BJT is basically an organic semi-conductor device that controls an electric current by varying the voltage across, or the current through the two terminals. This provides the foundation of BJT Arrays, which combine multiple individual BJT elements in a single package, allowing them to be connected easily and used in a multiple numbers of applications.

The JANTX2N4854U is an integrated circuit which contains two NPN transistors, each of which is capable of handling a maximum collector-emitter voltage of 80V. The device is also capable of operating up to a temperature range of -55°C to 150°C. The JANTX2N4854U offers unusually low saturation voltages, ranging from .25V at 10mA to .2V at 80mA, and a very high current gain of 700 at 90mA.

The application field and working principle of the JANTX2N4854U can be classified in two major categories. Firstly, the device can be used in signal and power amplifying circuits, with the input current applied to either of the two transistors, and the amplified output gained from the other. Secondly, the two transistors can be used in a Darlington configuration, where both transistors are connected in tandem with the input of one transistor combined to the output of the other. This Darlington configuration pumps up the overall current gain of the circuit, providing higher power and signal amplification.

The JANTX2N4854U can also be employed in various industrial applications like automated test systems, automotive electronics, power conversion, military systems, and logic applications. However, its low cost, combined with its low voltage operation, makes it a great solution for various cost-sensitive applications as well such as consumer electronics.

The JANTX2N4854U has various features that make it an ideal choice for BJT array applications. Some of these features include high yields, wide temperature range ratings, low voltage operation, low saturation voltages, low collector-emitter saturation currents, and low power consumption.

In conclusion, the JANTX2N4854U is a versatile device which has a wide range of applications. Its reduced price, low voltage operation, and multiple transistor elements make it an ideal choice for low-cost, power-sensitive applications. Furthermore, its high current gain and low saturation voltage make it well suited for use in various industrial applications, as well as its Darlington configuration which provides higher power and signal amplification.

The specific data is subject to PDF, and the above content is for reference

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