JANTX2N5003 Allicdata Electronics
Allicdata Part #:

1086-21002-ND

Manufacturer Part#:

JANTX2N5003

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 80V 5A TO59
More Detail: Bipolar (BJT) Transistor PNP 80V 5A 2W Chassis, S...
DataSheet: JANTX2N5003 datasheetJANTX2N5003 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/535
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59
Description

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The JANTX2N5003 is a common type of BJT (Bipolar Junction Transistor) active component. BJT, also known as Bipolar Junction Transistor, is a type of electronic component which utilizes two PN-junctions to control the current flow between two terminals using a third terminal. It is primarily used for switching and amplification functions.The JANTX2N5003 is a single transistor, with a collector/base junction voltage of 30V, a collector/emitter junction voltage of 100V and an emitter/collector current of 500mA. It is an NPN-type BJT, meaning that its base is a p-type material and the collector/emitter/base junctions form a three-point connection, commonly called a "triple junction". It is composed of two semiconductor emitter and collector layers made from either N-type or P-type semiconductors, with a base electrode, typically made of doped Silicon. The JANTX2N5003 offers good linearity, low power dissipation and a low on-resistance, making it the ideal choice for applications with low current and low voltage requirements.

The main applications of the JANTX2N5003 are in analog and digital switching, as well as in linear amplifiers. It also can be used in high voltage applications. In analog switching applications, such as for example in multiplexers, the JANTX2N5003 provides a low on-resistance, meaning that a larger amount of current can be driven through the transistor, thereby increasing the speed of which it switches. Moreover, the JANTX2N5003 has low noise, low power dissipation and high frequency response. Accordingly, it also can be used in switching and linear amplifiers, providing low power consumption, low noise and good linearity. When used as a switch, the JANTX2N5003 can be used to turn on or off any digital signal or current. It is also used to amplify weak signals.

The working principle of the JANTX2N5003 relies on the relationship between the PN-junctions that the transistor is formed from. When an electric signal is applied to the base of the transistor, electrons from the collector will be attracted to the base and some of these electrons will move through the base and travel to the emitter, thereby creating a current flow. This process is known as transistor action and it is what allows for the transistor to be used in switching and amplifier applications. Furthermore, due to the presence of the base current, the current flowing from the collector to the emitter is much larger than the current produced at the base. This allows the transistor to be used in applications that require much larger signals than those produced by the base current.

In summary, the JANTX2N5003 is a common type of BJT which is used in both analog and digital switching as well as in linear amplifiers. It has a collector/base junction voltage of 30V, a collector/emitter junction voltage of 100V, an emitter/collector current of 500mA and a low on-resistance, making it ideal for applications with low current and low voltage requirements. Additionally, the working principle of the JANTX2N5003 relies on the relationship between its PN-junctions and transistor action. As such, it can be used to effectively switch and amplify signals with low current and low voltage requirements.

The specific data is subject to PDF, and the above content is for reference

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