
Allicdata Part #: | 1086-15524-ND |
Manufacturer Part#: |
JANTX2N5237 |
Price: | $ 25.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 120V 10A TO-5 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 10A 1W Through ... |
DataSheet: | ![]() |
Quantity: | 5 |
1 +: | $ 22.79340 |
Series: | Military, MIL-PRF-19500/394 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 1A, 10A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 5A, 5V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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JANTX2N5237 is a high gain, low noise, epitaxial silicon NPN transistor. It is designed for general purpose use in low power, medium frequency applications. It is suitable for general purpose audio amplifiers and power switching applications. JANTX2N5237 features a low noise figure and high voltage rating, making it suitable for a wide range of operating conditions. The device also features a wide operating temperature range. This makes it suitable for use in a variety of applications, including in environments where temperature changes are experienced.
The JANTX2N5237 is a high voltage, epitaxial PNP structure, with a silicon epitaxy layer. The device\'s collector and emitter are connected in a common base configuration. This device features a low noise figure and a high voltage rating. It is also designed with low power consumption and low input current. The device can operate at high frequencies, making it suitable for a wide range of applications.
The JANTX2N5237 has a three-terminal base, collector and emitter connection. The collector is connected to the base and the emitter is connected to the base. In the common-base configuration, the collector-emitter voltage is applied to the base-emitter junction, which controls the current. The base-collector junction is reverse-biased and the current is controlled by the collector resistance.
The working principle of the JANTX2N5237 is based on the NPN transistor. It takes advantage of the fact that when current passes through the base of a transistor, it increases the current in the collector significantly. In the JANTX2N5237, this increase is used to amplify the input signal. When the base-emitter junction is forward biased, the base-collector junction becomes reverse biased, which decreases the current in the collector. This decreases the gain of the device.
JANTX2N5237 can be used in a variety of applications, such as amplifier stages, audio amplifiers, power switching and low noise amplifiers. It is also suitable for low power applications. The device is also suitable for high frequency applications, such as oscillators, with its high frequency rating of 150 MHz.
Other applications of the JANTX2N5237 include frequency control in TV sets and radios, low noise amplifiers in cell phones, RF amplifiers and transistor detector circuits. It is also used in switching applications as light switches and relay drivers. It can also be used in audio and video amplifiers, driving single and multiple load device transducers and many other applications.
JANTX2N5237 has the advantage of being a low noise, high voltage, low power and low input current device. This makes it suitable for a variety of applications. In addition, it is designed to operate at high frequencies, making it suitable for many high frequency applications. The device is also designed for general purpose use in low power, medium frequency applications.
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