
Allicdata Part #: | 1086-21039-ND |
Manufacturer Part#: |
JANTX2N5238 |
Price: | $ 19.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 170V 10A TO5 |
More Detail: | Bipolar (BJT) Transistor NPN 170V 10A 1W Through ... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 18.00630 |
Series: | Military, MIL-PRF-19500/394 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 170V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 1A, 10A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 5A, 5V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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A Bipolar Junction Transistor (BJT) is a type of transistor that uses electrical current to control current flow between two terminals. It is referred to as a Bipolar Transistor (BJT) because it utilizes two different types of semiconductors to form three regions. JANTX2N5238 is a particular part number of a BJT device. This article will discuss the application field and working principle of the JANTX2N5238.
Application Field
The JANTX2N5238 is a PNP silicon epitaxial planar transistor designed for use in low voltage applications. It is primarily used in low power switching, linear and digital applications, such as:
- Switch and Relay Control
- Small Signal Amplifiers
- Analog Voltage Regulators
- Bar Code Scanners
- Transducer Amplifiers
The JANTX2N5238 is also suitable for applications such as audio stages, line drivers, interface circuits, and other low power, high frequency applications.
Working Principle
As a Bipolar Junction Transistor, the JANTX2N5238 is composed of two pieces of semiconductor material—one P-type and one N-type. The P-type material is the base and the N-type material is the collector. When a voltage is applied to the base, electrons flow from the N-type material to the P-type material, resulting in an increase in current through the collector-base junction and also an increase in current flowing out of the emitter.
The current gain of a BJT depends on the doping level of the three regions, as well as the voltage applied to the base-emitter junction. The higher the doping level, the higher the current gain. The current gain is typically expressed as hFE, which is the ratio of output current to input current. For the JANTX2N5238, the minimum hFE is 250 and the maximum is 1000.
Conclusion
In conclusion, the JANTX2N5238 is a PNP type BJT designed for low voltage applications. We have discussed its various applications and its working principle. Finally, it is important to note that the JANTX2N5238 has a minimum current gain of 250 and a maximum current gain of 1000.
The specific data is subject to PDF, and the above content is for reference
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