JANTX2N5666S Allicdata Electronics
Allicdata Part #:

1086-21067-ND

Manufacturer Part#:

JANTX2N5666S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 200V 5A TO39
More Detail: Bipolar (BJT) Transistor NPN 200V 5A 1.2W Through...
DataSheet: JANTX2N5666S datasheetJANTX2N5666S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/455
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5A, 1A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Power - Max: 1.2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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Transistors - Bipolar (BJT) - Single

A Bipolar Junction Transistor, or BJT, is a discrete semiconductor device made with three active terminals. BJTs are used as an active switching device, current amplifier and signal linear active device in a wide range of applications. The JANTX2N5666S is a single BJT which is designed for use in circuits requiring high voltage, large current and long-term stability.

Application Field

The JANTX2N5666S is designed for use in a variety of applications, including radio frequency circuits, driver circuits, automotive motors, television circuits, and audio amplifiers. It is also suitable for pulse circuits, such as ultrasonic sensing, laser diode drivers and motor controllers. Furthermore, it is ideal for general-purpose power management circuits, audio amplifiers, video cassette recorders and amplifiers, power supplies and any other applications which require high voltage, current and stability.

Working Principle

The JANTX2N5666S consists of NE5566S type emitter-coupled NPN transistors in a Surface Mounted Device. It operates as a linear current amplifier as well as a switching device, depending on the applied voltage. When a voltage is applied to the base, the current flow between the emitter, collector and base is controlled. The internal architecture of the transistors is such that the collector current (Ic) can be controlled by the base current (Ib). This allows for various amplification and switching functions to be implemented.

When used as a current amplifier, the output current from the collector is proportional to the input current from the base. The transistor is then used to amplify a weak signal from the base and provide a stronger output from the collector. When used as a switching device, the transistor is used to control the on/off state of a current or voltage. By controlling the base current, the collector current can be completely switched off, allowing for control of the on/off state of the circuit.

In addition to its switching and current amplifying roles, the JANTX2N5666S is also used for low-noise amplification, which reduces the level of the unwanted noise in a circuit. This is done by passing a higher current through the transistor, allowing the unwanted noise to be suppressed. By using this technique, lower noise levels can be achieved.

Conclusion

The JANTX2N5666S is a single-BJT designed for high-voltage, current and stability applications. It can serve a variety of purposes, including current amplifying and switching functions, as well as low-noise amplification. It is well-suited for use in radio frequency circuitry, driver circuits, Television circuits, audio amplifiers and more. Moreover, it is ideal for use in applications which require high voltage, current and stability.

The specific data is subject to PDF, and the above content is for reference

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