
Allicdata Part #: | 1086-21072-ND |
Manufacturer Part#: |
JANTX2N5667S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 300V 5A TO39 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 5A 1.2W Through... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/455 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1A, 5A |
Current - Collector Cutoff (Max): | 200nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 1A, 5V |
Power - Max: | 1.2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 (TO-205AD) |
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The JANTX2N5667S is classified into the category of single bipolar transistors (BJT). It is a surface mount PNP device with a maximum DC current gain of 150. This transistor is typically used in communication equipment, signal processing applications, and any instances where high-speed switching is required.
The JANTX2N5667S is designed to operate in both low-power and high-power environments with either AC or DC signals. Its various features, such as a maximum voltage ratings of 28V, low current leakage, and low thermal resistance, make it suitable for a wide range of applications. The device can also be used in automated systems and can operate at frequencies up to 30 MHz.
The working principle of a bipolar transistor is based on the flow of electrons or holes through the device and the control of this current by the base voltage applied to the device. In PNP transistors like the JANTX2N5667S, holes are injected into the base region by the base-emitter junction. This in turn creates an excess of holes near the base region and causes the majority carriers (holes) to be swept to the collector side. This, in turn, allows a current to flow from the collector to the emitter. At the same time, the base-collector junction acts as a diode, allowing current to flow from the base to the collector when the voltage between them is negative.
The JANTX2N5667S can be used in numerous electronic applications and devices. It is commonly found in switching applications, power management circuits, and analog amplifier designs. It can also be used in voltage regulation and motor control applications, as the device is designed to operate with minimal variation in gain across those applications. Additionally, its low collector-emitter saturation voltage ensures that power losses are minimized. The transistor\'s low temperature drift makes it ideal for precision analog circuits.
In conclusion, the JANTX2N5667S is a high performance PNP transistor that is suitable for many applications. With its wide range of features, including its low voltage ratings, low thermal resistance and large current gains, its use in a variety of communication circuits and automation systems is a perfect match. Furthermore, its low temperature drift makes it ideal for precise analog circuits and power management systems.
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