Allicdata Part #: | 1088-1025-ND |
Manufacturer Part#: |
JANTX2N6058 |
Price: | $ 31.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN DARL 80V 12A TO-3Bipolar (BJT) Transisto... |
More Detail: | N/A |
DataSheet: | JANTX2N6058 Datasheet/PDF |
Quantity: | 26 |
1 +: | $ 31.19000 |
Series: | Military, MIL-PRF-19500/502 |
Packaging: | Bulk |
FET Type: | -- |
Part Status: | Active |
Technology: | -- |
Transistor Type: | NPN - Darlington |
Drain to Source Voltage (Vdss): | -- |
Current - Collector (Ic) (Max): | 12A |
Current - Continuous Drain (Id) @ 25°C: | -- |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 120mA, 12A |
Rds On (Max) @ Id, Vgs: | -- |
Current - Collector Cutoff (Max): | 1mA |
Vgs(th) (Max) @ Id: | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 6A, 3V |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Power - Max: | 150W |
Vgs (Max): | -- |
Frequency - Transition: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
FET Feature: | -- |
Mounting Type: | Through Hole |
Power Dissipation (Max): | -- |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-3 |
Base Part Number: | -- |
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The JANTX2N6058 is a single transistor made of bipolar junction technology (BJT). It is designed to be used in applications such as power supply, motor control, and switching regulators.The JANTX2N6058 is capable of producing high and low currents and can be utilized for high-frequency switching applications. This makes the device advantageous for power and electronics users.
The JANTX2N6058 is composed of two sections: the emitter, base and collector. The emitter and collector are connected together and the base is left open. The transistors are manufactured in a NPN configuration, meaning that the emitter and collector are negatively biased, which makes them conducive to low-current applications.
The device’s operation is based on the principle of bipolar junction transistor (BJT). In this type of transistor, two PN junctionsare created between two semiconductor materials, the N-type and the P-type. The base is the region where the two PN junctions meet and the current through them controls the current flow between the emitter and base. When the base is positively biased, the current from the emitter and collector is allowed to flow, thus resulting in a net gain in current.
The JANTX2N6058 also has a breakdown voltage of 40V and a low saturation voltage of 2V. This makes it ideal for a wide range of uses, from dynamic amplification to switching applications.
The device also offers outstanding thermal stability, making it suitable for use in an environment where temperatures may fluctuate. It is capable of handling high currents up to 150A which makes it perfect for applications like motor control, power supplies and converters.
In addition, its linear current gain is around 100, giving it the capability to produce a high amount of power. Moreover, it is capable of operating at high frequencies, up to 20MHz, allowing it to integrate with advanced digital circuitry and logic devices.
The JANTX2N6058 single transistor can be used in a variety of applications. It is widely used in audio circuits, digital circuitry, power switching, and amplifier circuits. It is ideal for use in projects that involve high-frequency switching and is also suitable for applications that require high gain and fast switching speeds.
Overall, the JANTX2N6058 is an excellent device for both commercial and industrial applications. It is highly reliable, has a high current gain, and offers great performance in terms of frequency and saturation voltage. It is ideal for power and electronics users and can be used in various applications like motor control, audio circuitry, anddigital circuitry.
The specific data is subject to PDF, and the above content is for reference
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