JANTX2N6250T1

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The JANTX2N6250T1 is a high-power NPN bipolar junction transistor (BJT) intended for use in high-reliability, high-reliability, high-power applications including video amplifiers, telecommunications switches, and power amplifiers. This part is rated for a maximum collector-emitter voltage of 200 watts with a power dissipation of 2 watts and a collector current rating of 2.5 amps. It is a low-profile device with a package height of only 1.5 mm.

Features

The JANTX2N6250T1 is a high-performance BJT designed for high-reliability, high-power applications. It features a low-profile package design, high-voltage capability, and a maximum junction temperature of 200 °C. The device also features a high gain-bandwidth product ratio of 1.6 GHz and a maximum collector-base capacitance of only 8 pF. Other features include a voltage drop of 0.25 V at a current level of 3 amps and a collector-base saturation voltage of 0.25 V at a current level of 1 amp.

Applications

The JANTX2N6250T1 is designed for use in high-reliability, high-power applications such as video amplifiers, telecommunications switches, and power amplifiers. This part is suitable for applications where high voltage and current are present, including motor control and switching applications. Other applications include power converters, high-voltage motor speed control, and high-voltage power supply circuits.

Working Principle

BJTs are a type of semiconductor device that consists of two distinct layers separated by a thin layer of insulation material. The top layer, known as the emitter, emits a majority of the current, while the bottom layer, known as the collector, receives the electrons emitted from the emitter. The base connects the emitter to the collector. When a voltage is applied to the base, the current is controlled through the base-emitter or collector-base junction, depending on the type of device.

In the case of the JANTX2N6250T1, current flows from the emitter to the collector when a voltage is applied to the base. This current passes through the small junction regions of the device and creates a large voltage drop across the collector-emitter terminals. This voltage drop creates an avalanche breakdown region, which causes the current to flow through the device in an avalanche fashion, thereby increasing the collector current. The gain of the device is determined by the ratio of the voltage across the collector-emitter junction to the voltage applied to the base.

Conclusion

The JANTX2N6250T1 is a high-power bipolar junction transistor that is suitable for use in high-reliability, high-power applications. It features a low profile package design and a maximum junction temperature of 200 °C. The device has a maximum collector-base capacitance of only 8 pF, a voltage drop of 0.25 V at a current level of 3 amps, and a collector-base saturation voltage of 0.25 V at a current level of 1 amp. The JANTX2N6250T1 can be used in applications such as video amplifiers, telecommunications switches, and power amplifiers, as well as motor control and switching applications.

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