JANTX2N6251T1 Allicdata Electronics
Allicdata Part #:

1086-16192-ND

Manufacturer Part#:

JANTX2N6251T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 350V 10A TO-3
More Detail: Bipolar (BJT) Transistor NPN 350V 10A 6W Through ...
DataSheet: JANTX2N6251T1 datasheetJANTX2N6251T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/510
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V
Power - Max: 6W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Description

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Transistors are essential elements of any electric circuit, and Bipolar Junction Transistors (BJT) are commonly used for amplifying weak electric signals obtained from sensors. The JANTX2N6251T1 is a type of discrete signal BJT used for amplification and signal switching applications.

The JANTX2N6251T1 is mainly used in signal amplification, signal switching, signal isolation, and logic gates. It consists of a base, collector and emitter. The base controls current in the transistor, the emitter controls the application of the base current and collector current, and the collector helps to amplify the signal. The transistor\'s effectiveness as an amplifier and its signal strength rely on the relationship between the base, collector and emitter.

JANTX2N6251T1 transistors have a switching speed of up to 2MHz and have a rating of 100 mA. The maximum collector-to-emitter voltage (VCEO) of the JANTX2N6251T1 is 12V. It has a maximum collector current (IC) of 0.5A and a maximum power dissipation of 900mW. It also has a low noise figure, making it suitable for many signal amplification applications.

The working principle of JANTX2N6251T1 is based on the BJT configuration. When a current passes through the base of the transistor, it causes a proportionate amount of current to flow from the collector to the emitter. This current is used to amplify a signal. The amplification provided by the transistor is determined by the ratio of the collector current to the base current.

In signal switching applications, the JANTX2N6251T1 is used to control the current flow in a circuit. When the base current is applied, it causes a current to flow from the collector to the emitter. This current can be used to turn on or off another circuit, depending on the polarity of the current. The switching time of the transistor is determined by the rate at which the base current is applied.

The JANTX2N6251T1 can also be used in logic gate applications, such as AND gates and OR gates. It is used to control the output of these logic gates, depending on the inputs. The JANTX2N6251T1 is also used for signal isolation applications. It is used to separate two circuits from being powered by the same power source, to keep the signals in one circuit from affecting the other.

In conclusion, the JANTX2N6251T1 is a discrete BJT suitable for many signal amplification, signal switching, signal isolation, and logic gates applications. Its working principle is based on the BJT configuration and its switching speed is up to 2MHz. Its maximum collector-to-emitter voltage is 12V, maximum collector current is 0.5A, and maximum power dissipation is 900mW. It also has a low noise figure, making it suitable for many signal amplification applications.

The specific data is subject to PDF, and the above content is for reference

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