JANTX2N6341 Allicdata Electronics
Allicdata Part #:

1086-16196-ND

Manufacturer Part#:

JANTX2N6341

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 150V 25A
More Detail: Bipolar (BJT) Transistor NPN 150V 25A 200W Throug...
DataSheet: JANTX2N6341 datasheetJANTX2N6341 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/509
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
Power - Max: 200W
Frequency - Transition: --
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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The JANTX2N6341 is a high-voltage, high-speed bipolar junction transistor (BJT) designed for use in high-reliability consumer and industrial applications. The device offers both low on-state and high off-state leakage currents, making it suitable for use in power supplies, power switching and other applications. The device is rated for a collector-emitter breakdown voltage of 600 volts, and is capable of operating at up to 200 mA. It has a maximum collector-base capacitance of 6 pF and a maximum base-emitter capacitance of 16 pF.

The JANTX2N6341 is a generally preferred device for applications that require high-speed operation and robust noise immunity. It is commonly used in automotive, consumer, and industrial applications. Additional areas of application include data communications, printing and imaging, security systems, and smart energy-efficient lighting. The device is designed to provide a reliable and cost-effective solution, while minimizing power consumption and maximizing data throughput.

The JANTX2N6341 is a NPN-type BJT. Its base-emitter junction is reverse-biased and its collector-base junction is forward-biased. The device\'s collector is connected to the voltage source, while the base is connected to the circuit ground, and the emitter is connected to a load. When the load current is increased, the voltage across the base-emitter junction increases, which increases the collector current. As the collector current increases, the voltage across the collector-emitter junction drops, causing the transistor to turn on. When the load current is decreased, the collector current decreases, causing the transistor to turn off.

The JANTX2N6341’s high-speed operation makes it suitable for high-frequency applications and power switching. Its high-voltage capability and low on-state leakage current make it suitable for applications that require robust noise immunity and high reliability. The device’s low off-state leakage current makes it suitable for high-efficiency applications. The device is also rated for a maximum operating temperature of 150 degrees Celsius, and is ESD-protected for applications in harsh environments.

The JANTX2N6341 is an ideal solution for applications that require reliability and robustness in an efficient and cost-effective package. Its high-speed operation and high-voltage capability make it suitable for a wide variety of applications, from automotive and consumer to industrial and smart lighting.

The specific data is subject to PDF, and the above content is for reference

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