Allicdata Part #: | 1086-16505-ND |
Manufacturer Part#: |
JANTXV1N3029D-1 |
Price: | $ 23.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 24V 1W DO41 |
More Detail: | Zener Diode 24V 1W ±1% Through Hole DO-41 |
DataSheet: | JANTXV1N3029D-1 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 20.75360 |
Series: | Military, MIL-PRF-19500/115 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 24V |
Tolerance: | ±1% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 18.2V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
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JANTXV1N3029D-1 Application Field and Working Principle
JANTXV1N3029D-1 is a type of zener diode designed for consumer-grade integrated circuit applications. It is a three-terminal, low-voltage, dual-level voltage regulator with a rated input voltage of 5V and a maximum reverse breakdown voltage of 6.8V. The device is constructed of a rugged polysilicon base substrate and epitaxial layer, which allows for enhanced ionic stability and improved surface passivation over standard devices.
The device is designed for use in low-power, low-noise voltage regulation applications. It is well-suited for use in telecommunications, medical, automotive, and consumer-grade electronics. The device is also optimal for use in low-power applications such as backlighting, power LEDs, and illumination.
The JANTXV1N3029D-1 is built with a monolithic integrated circuit architecture that helps reduce size and cost compared to a discrete device. Additionally, the device offers superior transient performance due to low power dissipation and large amounts of current and has low drift and fast turn-on time.
Working Principle
The JANTXV1N3029D-1 is designed to operate on a bias voltage supplied by an external voltage regulator. The device operates by DC switching the current path between the cathode and anode depending on the level of bias applied. When the bias voltage is lower than the device\'s breakdown voltage, the device operates in the forward bias mode, allowing current to flow through the device. When the voltage exceeds the breakdown voltage, the device operates in reverse bias mode, creating a voltage drop across the device that regulates the current.
The device can operate in both transient conditions and steady-state conditions. In steady-state, the device allows current to flow from anode to cathode through an internal PN junction that creates a voltage drop between the external power supply and the device\'s output. During transient conditions, the device acts as an overvoltage protection circuit, with the zener acting as an open circuit, redirecting current around the internal PN junction to ensure that no currents flow through the device.
Conclusion
The JANTXV1N3029D-1 is an ideal choice for applications requiring low power consumption, low noise, and improved temperature stability. It features a robust, monolithic integrated circuit architecture, providing enhanced performance in various applications. Additionally, the device\'s low power dissipation and fast turn-on characteristics enable low-power, high-frequency applications. And, the device is well-suited for use in various consumer and industrial applications, such as backlighting, power LEDs, and illumination.
The specific data is subject to PDF, and the above content is for reference
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