Allicdata Part #: | JANTXV1N4470S-ND |
Manufacturer Part#: |
JANTXV1N4470 |
Price: | $ 8.13 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | 16V ZENER 1.5W |
More Detail: | N/A |
DataSheet: | JANTXV1N4470 Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 7.38836 |
Series: | * |
Part Status: | Active |
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JANTXV1N4470 is a special power MOSFET capable of supplying a maximum of 6.5 watts at breakdown voltage of 40 V or 20 watts at breakdown voltage of 60 V. This MOSFET is capable of supplying an extremely high level of power for its size and is extremely resistant to breakdown voltage fluctuations. This makes it an ideal choice for a number of different applications.
JANTXV1N4470 has a wide range of uses and can be found in many consumer electronic products, including audio amplifiers, motors, and switching power supplies. This particular MOSFET is particularly well-suited for use in computer motherboards, where its high power output makes it an ideal candidate for providing clean, reliable power to the system\'s components. It is also useful in applications such as power injectors, a current-sensing device that reduces the power requirements of other electronic components.
The working principle of the JANTXV1N4470 is based on the same MOSFET technology as its fellow MOSFETS. The MOSFET is an insulated gate transistor which utilizes a three-phase voltage waveform and applies it to the metal-oxide-semiconductor field-effect transistor. The MOSFET works by controlling the flow of electrons through a channel between the source and drain. The electrons are then drawn to one side of the channel, creating the electric current.
The electrical operation of the JANTXV1N4470 depends on the voltage drop across the channel, which is determined by the level of common-source voltage. When the common-source voltage is high, the channel is closed and no current flows. This is known as a high-power operation. As the common-source voltage is lowered, the channel opens and current begins to flow. This is known as a low-power operation.
The JANTXV1N4470 is designed to be extremely reliable in both high and low power operations. It is also capable of providing a high-temperature operating environment. This MOSFET is an ideal choice for applications that require high reliability and long-term performance.
In summary, the JANTXV1N4470 is a powerful and reliable MOSFET, which is extremely useful in a variety of applications. Its wide range of uses is due to its extreme resistance to breakdown voltage fluctuations and its ability to provide a high-temperature operating environment. The MOSFET\'s working principle is based on the same MOSFET technology as other MOSFETS and is capable of supplying an extremely high level of power for its size.
The specific data is subject to PDF, and the above content is for reference
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JANTX1N6104A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
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JANTX1N6105 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V AXI... |
JANTX1N6105AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 13.4V B SQ... |
JANTX1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JANTX1N6106 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JANTX1N6106AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.6V 14.5V B SQ... |
JANTX1N6107 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JANTX1N6107A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JANTX1N6107AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 15.6V B SQ... |
JANTX1N6107US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.4V 16.38V B S... |
JANTX1N6108 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
JANTX1N6108A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V AXIA... |
JANTX1N6108AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 16.9V B SQ... |
JANTX1N6108US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.1V 17.75V B S... |
JANTX1N6109 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V AXI... |
JANTX1N6109A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 18.2V AXIA... |
JANTX1N6110 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V AX... |
JANTX1N6110US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.4V 22.05V B ... |
JANTX1N6111 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V AX... |
JANTX1N6111A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V AXI... |
JANTX1N6111AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 22.3V B S... |
JANTX1N6111US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 12.2V 23.42V B ... |
JANTX1N6112 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V AX... |
JANTX1N6112AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 25.1V B S... |
JANTX1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JANTX1N6113 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 29.09V AX... |
JANTX1N6113A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V AXI... |
JANTX1N6114 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V AX... |
JANTX1N6114US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 16.7V 32.03V B ... |
JANTX1N6115 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V AX... |
JANTX1N6115A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V AXI... |
JANTX1N6115AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 33.3V B S... |
JANTX1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JANTX1N6116 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V AX... |
JANTX1N6116AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 37.4V B S... |
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