JANTXV1N4489C Allicdata Electronics
Allicdata Part #:

1086-18046-ND

Manufacturer Part#:

JANTXV1N4489C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 100V 1.5W DO41
More Detail: Zener Diode 100V 1.5W ±2% Through Hole DO-41
DataSheet: JANTXV1N4489C datasheetJANTXV1N4489C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/406
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±2%
Power - Max: 1.5W
Impedance (Max) (Zzt): 250 Ohms
Current - Reverse Leakage @ Vr: 250nA @ 80V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Description

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Many different types of diodes exist today, with each type offering unique performance characteristics. The JANTXV1N4489C is a part of the Zener diode family and is the right choice for applications that require a low forward voltage and a low reverse breakdown voltage. This article will discuss the application field and working principle of the JANTXV1N4489C.

The JANTXV1N4489C is a single Zener diode that features a reverse breakdown voltage of 6.2 volts, a low forward voltage of 0.25 volts, and nanosecond response times. This type of Zener diode has a wide range of applications, including voltage regulation, noise suppression, and circuit protection. Its fast response time makes this diode suitable for high-frequency applications, like ultra-wideband (UWB) communication systems.

The JANTXV1N4489C operates based on the principle of electron tunneling. This principle states that electrons can quantum tunnel through a thin potential barrier, which results in the movement of charge carriers being carried through the barrier. This phenomenon is known as tunneling, and it provides the basic operating principle of the Zener diode. Tunneling occurs when the barrier is less than the applied electric field, allowing electrons to move from low-potential to high-potential regions.

The JANTXV1N4489C is equipped with special features to maximize performance. These features include an immersed dielectric layer, ultra-low capacitance, and robust avalanche characteristics. The immersed dielectric layer helps reduce noise, provides excellent stability, and ensures that the device can operate with minimal heating. The ultra-low capacitance ensures a fast response time for high-frequency applications, and the robust avalanche characteristics help to protect the device from damage caused by large current and voltage spikes.

The JANTXV1N4489C is perfect for applications that require a low forward voltage, a low reverse breakdown voltage, and fast response times. The device is well suited for UWB communication systems, noise suppression, and circuit protection. Its unique features and fast response time make it the perfect choice for applications that require these special characteristics.

The specific data is subject to PDF, and the above content is for reference

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