JANTXV1N5523D-1 Allicdata Electronics
Allicdata Part #:

1086-19022-ND

Manufacturer Part#:

JANTXV1N5523D-1

Price: $ 18.61
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 5.1V 500MW DO35
More Detail: Zener Diode 5.1V 500mW ±1% Through Hole DO-35 (DO-...
DataSheet: JANTXV1N5523D-1 datasheetJANTXV1N5523D-1 Datasheet/PDF
Quantity: 1000
100 +: $ 16.74710
Stock 1000Can Ship Immediately
$ 18.61
Specifications
Series: Military, MIL-PRF-19500/437
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±1%
Power - Max: 500mW
Impedance (Max) (Zzt): 26 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 2.5V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Description

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Diodes are key components in most electrical and electronic circuits. The JANTXV1N5523D-1 is a corner-shared single Zener diode, made from the most advanced semiconductor materials, for use in a variety of electronic applications. It is designed for use in high-reliability RF applications and can be used for both switching and rectifying applications.

The JANTXV1N5523D-1 allows electrical current to flow in both directions, i.e., it is a bidirectional device, and it also offers reverse breakdown protection. It is manufactured in a wide variety of forms, including chip package, do-it-yourself, and surface mount technologies.

The JANTXV1N5523D-1 has a wide range of applications, such as power supplies, motor controllers, voltage regulation, and RF amplifiers. Its main features are high conductivity, wide reverse breakdown voltage range, and low capacitance. The maximum power dissipation rating of the device is 350 mW, and the maximum peak current rating is 1 A. The typical reverse breakdown voltage range is 5.1 V to 6.0 V. The maximum forward surge current is 50 A.

The device has a thermally enhanced, symmetrical dual-phase structure. This helps minimize damage during mounting. The dual-phase structure also minimizes power dissipation and thermal resistance. The device also provides a large Vz-E temperature mix, which reduces temperature input sensitivity and improves the voltage stability of the device.

The working principle of the JANTXV1N5523D-1 is quite simple. When the device is forward biased, electric current flows through the diode in the direction of the arrow on the diode symbol. This is known as the forward conduction mode. When the diode is reverse biased, there is no current flow because the voltage dropped across the diode prevents the electrons from being able to cross the junction and reach the other side. This is known as the reverse blocking mode.

In the reverse conduction mode, the junction is reversed biased, and current flows through the device in the direction opposite to the arrow on the diode symbol. This mode is used in a variety of circuit designs to create the voltage dependent diode or Zener diode, where a low reverse breakdown voltage causes the reverse current to increase beyond a certain level. This mode is used in voltage regulation and other circuits.

Overall, the JANTXV1N5523D-1 is a popular single Zener diode due to its versatile application and high-reliability features. Its main features include high conductivity, wide reverse breakdown voltage range, low capacitance, high power dissipation rating, and high peak current rating. Its symmetrical dual-phase structure ensures minimal damage during mounting and thermal resistance, while its wide Vz-E temperature mix reduces temperature input sensitivity and improves voltage stability.

The specific data is subject to PDF, and the above content is for reference

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