JANTXV1N5529B-1

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The JANTXV1N5529B-1 is a silicon, planar, dual temperature-compensated Zener diode precision subminiature package for use in reverse voltage applications. It is designed for high-temperature, high-voltage applications. The device has an integrated reverse voltage of 8.9V and a low forward voltage drop of 1.37V.

The JANTXV1N5529B-1 has a wide range of applications, including power supply protections and temperature control. The device is well suited to provide a stable voltage limit in a DC voltage regulator. It can also be used to protect power supplies and circuits from voltage spikes, as the Zener barrier effectively blocks unwanted surges.

The device also offers temperature compensation. A thermistor is used to adjust the Zener voltage according to the ambient temperature, which helps to maintain the voltage level over a wide temperature range. This makes the device ideal for use in hot environments, extreme cold climates and extended temperature ranges.

The working principle of the JANTXV1N5529B-1 is a reverse breakdown voltage. When the device is connected to a DC source, the current flows from anode to cathode; however, when the source voltage exceeds the Zener barrier, the current is reversed and the Zener Diode is turned “on”. This causes the device to reduce the excess voltage, thus providing a regulated output for reverse voltage applications.

In summary, the JANTXV1N5529B-1 is a dual temperature-compensated Zener Diode precision subminiature package designed for high-temperature, high-voltage applications. Its reverse voltage is 8.9V and its forward voltage drop is 1.37V. It is suitable for use in wide range of applications, including power supply protections and temperature control, and its temperature compensation allows it to be used in hot environments, extreme cold climates and extended temperature ranges. Its operating principle is a reverse breakdown voltage, which results in the device providing a regulated output for reverse voltage applications.

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