Allicdata Part #: | 1086-19440-ND |
Manufacturer Part#: |
JANTXV1N5807URS |
Price: | $ 19.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 50V 3A BPKG |
More Detail: | Diode Standard 50V 3A Surface Mount B, SQ-MELF |
DataSheet: | JANTXV1N5807URS Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 17.78180 |
Series: | Military, MIL-PRF-19500/477 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 875mV @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 60pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Rectifiers - Single
JANTXV1N5807URS is a type of diode rectifier specifically designed for applications with low forward voltage drop and efficiency requirements. It has a characteristic reverse protection against high voltage transients, overcurrent protection and current conduction capability. The JANTXV1N5807URS is a single-phase, full wave, silicon diode with a blocking voltage of 600 volts and a Leakage current of 4uA. It is designed to provide exceptional performance in applications requiring low-loss coupling and power conversion efficiency.
Application fields
The JANTXV1N5807URS power diode can be used in various power electronics applications ranging from power supplies and adapters to solar energy systems and charging applications. To achieve optimal results, the diode should be used in applications that require low forward voltage drop and high efficiency. These applications include AC-DC flyback converters, AC-DC forward converters, DC-DC forward converters, Solar energy systems and cell phone chargers. With its small footprint and high peak current capability, the JANTXV1N5807URS is also ideal as a high-efficiency rectifier in mobile phones, PDAs, portable media players, and portable appliances.
Working Principle
The JANTXV1N5807URS power diode is designed to provide high-efficiency and high-accuracy operation in power conversion applications. The diode works by using a reverse recovery current to control the component’s turn-on time. When the reverse recovery current is turned on, the diode’s peak current rating is increased. The diode can tolerate high reverse voltage transients, which improve its performance in highly dynamic applications. The diode also exhibits low-inductance current conduction capability and a low-capacitance design that increases the device’s efficiency. The device also has over-current protection and short-circuit protection built-in, which ensures a stable operation in various applications.
The JANTXV1N5807URS is a highly efficient, low-demand rectifier solution for various low-voltage applications. It offers high-efficiency, low-voltage drop, and over-current protection for a wide range of applications. Its increased efficiency, low-inductance current conduction and low-capacitance design make it an ideal choice for applications requiring high power conversion efficiency. The JANTXV1N5807URS is also suitable for high-dynamic applications, such as mobile phones and other portable devices.
The specific data is subject to PDF, and the above content is for reference
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