
Allicdata Part #: | 1086-15929-ND |
Manufacturer Part#: |
JANTXV1N6312US |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 3.3V 500MW DO35 |
More Detail: | Zener Diode 3.3V 500mW ±5% Through Hole DO-35 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/533 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 3.3V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 27 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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Introduction
JANTXV1N6312US is a single zener diode which is widely used in medical, automotive and other applications. It is designed with a very small case size, which makes it a perfect fit for applications where space is limited. Furthermore, the low capacitance feature of the device yields its excellent ESD performance.
Application Field
JANTXV1N6312US is usually employed as a protection device against overvoltage in automotive and medical applications, as well as other consumer electronics products. It is well-suited for space-constrained applications such as Power Distribution Unit (PDU), electronic control unit (ECU), automotive electronic control unit (ECU), Automatic Flight Control System (AFCS), adaptive cruise control (ACC) and temperature sensor. It can also be used as a temperature-compensated zener diode in consumer devices.
Working Principle
The working principle of JANTXV1N6312US is based on the zener effect. A reverse-biased zener diode, when subjected to a high electric field, reduces its reverse breakdown voltage and allows current to flow. This characteristic enables zener diodes to be used for voltage regulation and protection against overvoltage. The JANTXV1N6312US diode comes in a surface-mounted device (SMD) format with a low capacitance. The device has a low forward voltage drop, making it well-suited for applications that require low power consumption.
The device is also designed with a low dynamic resistance, allowing it to have high peak current capability and fast switching times. This makes it well-suited for applications where fast transient responses are required. Furthermore, the device is designed to be extremely robust and has a high tolerance to temperature and humidity. This makes it suitable for a wide range of environments including harsh outdoor conditions.
Conclusion
JANTXV1N6312US is a high performance single zener diode which finds its applications in automotive and medical applications, as well as consumer electronics devices. Its high power handling capability and low forward voltage drop make it highly suitable for applications where space and power are limited. Its low capacitance and robust design are beneficial for applications that require fast transient responses and in harsh outdoor environments.
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