JANTXV1N6330DUS

Series:	Military, MIL-PRF-19500/533
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	18V
Tolerance:	±1%
Power - Max:	500mW
Impedance (Max) (Zzt):	14 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 14V
Voltage - Forward (Vf) (Max) @ If:	1.4V @ 1A
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	SQ-MELF, B
Supplier Device Package:	B, SQ-MELF

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Introduction to JANTXV1N6330DUS

JANTXV1N6330DUS is a single Zener diode, which has a range of properties and applications unique among other diode types. Intended for use in high-reliability, cost-sensitive applications, the device is ideal for use in a variety of power management and voltage regulation applications.The diode is constructed of two oppositely doped semiconductor material Junctions, typically p-n or n-p junctions. In the JANTXV1N6330DUS Zener diode, the two ends are connected together, in reverse bias, with a very thin p-type material connected to the negative side and a very thin n-type material connected to the positive side.

Application Field

The JANTXV1N6330DUS is mostly used in applications that need a low-impedance direct current (DC) voltage reference. One of the most common applications for the JANTXV1N6330DUS is voltage regulation in power supplies, including multi-output, linear and switching power supplies.The device is also suitable for use as a low-loss low-noise source in low-voltage and low-power designs. It can be used to increase the voltage level on signals for improved noise immunity, or for level shifting and small signal voltage clamping. The device can be used to limit peak voltages and currents in circuits connected to long lines, and it can also be used to induce overvoltage protection in power sensitive systems.

Working Principle

The JANTXV1N6330DUS Zener diode is a two-terminal semiconductor device, composed of two semiconductor junctions connected in reverse bias. When reverse biased, an electric field is created between the two junctions, and current is forced through the diode.As the reverse bias voltage increases, the electric field across the diode increases. This increase in electric field causes electrons and holes to be swept freely across the junction, creating a Zener effect. The Zener effect is the breakdown of the barrier between the two junctions, allowing electrons to flow freely between them.At a certain voltage, the diode is said to be “Zenering”. At this point, the diode will limit the voltage the device can receive to the Zener voltage. As the reverse bias voltage increases, the amount of current that can flow through the diode decreases.

Conclusion

The JANTXV1N6330DUS is ideal for use in a variety of power management and voltage regulation applications. The device is also suitable for use as a low-loss low-noise source in low-voltage and low-power designs. It is a two-terminal semiconductor device, composed of two semiconductor junctions connected in reverse bias, and works by creating a Zener effect when the reverse bias voltage increases.

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