JANTXV1N6349US

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Diodes - Zener - Single

JANTXV1N6349US is a single diode in a Small-Outline Surface-Mount package, encapsulated in Hermetic ceramic, and is intended for usage in high-temperature, high-reliability applications.

The JANTXV1N6349US is designed for reverse bias applications. It has an operating temperature range of –65 to +160 °C and is designed to be connected to a circuit in which the anode voltage (A) is greater than the cathode voltage (K). This type of connection is also known as a Zener diode, for which the JANTXV1N6349US is designed. As a result of the reverse bias, the diode is designed to remain in a steady state, inhibiting current from flowing from the anode to the cathode.

The working principle of the JANTXV1N6349US is based on its internal design and the material used to fabricate the diode. Basically, when the anode voltage (A) is greater than the cathode voltage (K), electrons start flowing towards the anode. As these electrons reach the junction, they have a higher energy because of the greater anode voltage. This high energy of electrons causes ionization at the junction, and a region of high concentration of charge carriers called the space-charge layer is formed, which is responsible for maintaining an equilibrium between the cathode and anode voltages.

The space-charge layer breaks down at a certain voltage, known as the Zener voltage. Above this voltage, current begins to flow from the anode to the cathode, allowing for the regulation of voltages. Due to this behavior, Zener diodes have many applications in power supply circuits, such as over-voltage protection and voltage regulation. The JANTXV1N6349US is an ideal candidate to be used in such applications.

In addition, the JANTXV1N6349US is designed to handle a relatively large amount of current, making it suitable for high-power applications such as in power supply circuits. The small form-factor of the package also makes it suitable for installations in cramped spaces.

In conclusion, the JANTXV1N6349US is a single Zener diode designed for reverse bias applications. It is designed for use in a circuit with an operating temperature range of -65 to +160°C, and has a relatively high current rating making it suitable for high-power applications. The small form-factor of the package makes it suitable for installations in limited-space applications.

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