JANTXV1N649-1

Series:	Military, MIL-PRF-19500/240
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	600V
Current - Average Rectified (Io):	400mA
Voltage - Forward (Vf) (Max) @ If:	1V @ 400mA
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	50nA @ 600V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35
Operating Temperature - Junction:	-65°C ~ 175°C

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JANTXV1N649-1 Application Field and Working Principle

Introduction

JANTXV1N649-1 is a rectifier diode which is mainly applied in power supply circuits, voltage division circuits, voltage stabilization circuits and a wide range of other electrical devices. It is a single device that features a shrouded case for improving thermal characteristics. In addition, the diode can operate effectively in high frequency circuits.

Application Field

JANTXV1N649-1 is mainly used in power supply circuits and electronics circuits. In power supply circuits, it is responsible for providing constant source of DC current and rectifying AC current. This helps to ensure a reliable and stable source of power, which is essential for proper functioning of electrical devices. Furthermore, its high frequency performance makes it ideal for use in fast switching power supply applications, such as electronic circuits, voltage division circuits, and voltage regulation circuits.

Working Principle

The underlying principle of operation of JANTXV1N649-1 is the PN Junction. In a PN Junction, the two sides of the junction, i.e. the P-type and N-type materials, are linked together. When a voltage is applied across the PN junction, the current drawn from the junction is due to the flow of minority carriers, i.e. electrons or holes, across the junction. This phenomenon is known as the diode effect. In the case of JANTXV1N649-1, it is made from two different types of conducting material, one being heavily doped N-type silicon and one being lightly doped P-type silicon. The junction between these two materials forms the rectifier diode and it works by allowing current to pass in one direction and blocking current in the other direction. When a forward bias voltage is introduced to the PN junction of JANTXV1N649-1, it produces a low resistance path for the current to flow and it will allow current to pass only in a forward direction. However, when a reverse bias voltage is introduced, it produces a high resistance path for the current to pass through, thus blocking the current in the reverse direction. Thus, JANTXV1N649-1 acts as a rectifier and is used to convert alternating current (AC) to direct current (DC).

Conclusion

JANTXV1N649-1 is a single rectifier diode which is mainly used in power supply circuits and electronic circuits. It is made up of two different types of conducting materials, one being heavily doped N-type silicon and one being lightly doped P-type silicon. The working principle is based on PN Junction, where the junction between these two materials produces a low resistance path when a forward bias voltage is applied, and produces a high resistance path when a reverse bias voltage is applied.

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