
Allicdata Part #: | 1086-20266-ND |
Manufacturer Part#: |
JANTXV1N962BUR-1 |
Price: | $ 7.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 11V 500MW DO213AA |
More Detail: | Zener Diode 11V 500mW ±5% Surface Mount DO-213AA |
DataSheet: | ![]() |
Quantity: | 1000 |
207 +: | $ 6.50059 |
Series: | Military, MIL-PRF-19500/117 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 9.5 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 8.4V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA (Glass) |
Supplier Device Package: | DO-213AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JANTXV1N962BUR-1 Application Field and Working Principle
The JANTXV1N962BUR-1 is a Silicon epitaxial Planar Zener diode, which can be classified under Diodes - Zener - Single category. It was created to comply with the Mil-Prf-19500/460 standards, which features a low leakage current, low noise and low forward voltage drop. This device is used for applications in the microelectronics industry such as audio, TV, computer and telecommunications.
The working principle of JANTXV1N962BUR-1 is based on the principle of Zener breakdown. This occurs when a reverse-biasing voltage is applied to the diode, creating a reverse-biased potential difference between the diode’s p-n junction. This potential difference causes large electric fields to be created, creating a conductive path between the semiconductor’s two terminals and allowing current to flow.
Another advantage of the JANTXV1N962BUR-1 is that it can produce more current than other diodes due to its long reverse-biased region. The greater size of the depletion region enhances the diode’s impedance, thus enabling it to produce higher voltage and power conversion efficiency. The higher current output also means that the device can operate at higher temperatures than other Zener diodes.
The JANTXV1N962BUR-1 has a reverse breakdown voltage of 8.2V max, allowing it to be used in a wide range of applications such as power management, voltage regulator circuits, voltage converters, load switches and motor load control. Its reverse current rating is 50µA at a maximum reverse voltage of 8.2V, with a superior thermal resistance of 25°C/W and a power dissipation of 500mW.
In conclusion, the JANTXV1N962BUR-1 has excellent characteristics, making it suitable for high voltage applications. It has a low leakage current, low noise and low forward voltage drop, as well as a long reverse-biased region that allows for higher current output. It also features a wide range of reverse breakdown voltage and reverse current ratings, as well as an increased power dissipation and thermal resistance. Its features make it the perfect choice for a variety of applications in the microelectronics industry.
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