JANTXV2N1613L Allicdata Electronics
Allicdata Part #:

1086-15598-ND

Manufacturer Part#:

JANTXV2N1613L

Price: $ 295.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 30V 0.5A TO-5
More Detail: Bipolar (BJT) Transistor NPN 30V 500mA 800mW Thro...
DataSheet: JANTXV2N1613L datasheetJANTXV2N1613L Datasheet/PDF
Quantity: 14
1 +: $ 268.97200
10 +: $ 259.00900
Stock 14Can Ship Immediately
$ 295.87
Specifications
Series: Military, MIL-PRF-19500/181
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Description

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Transistors are semiconductor devices used to control the flow of electric current from one part of a circuit to another. The JANTXV2N1613L is a voltage-controlled field effect transistor (FET) commonly used in a wide range of electronic applications. This FET has a high input impedance, making it suitable for use in voltage-controlled circuits or as a low-power amplifier. In this article, we will discuss the application field and working principle of the JANTXV2N1613L.

Application Field

The JANTXV2N1613L is a type of N-channel MOSFET commonly used in high-frequency switching circuits, digital-to-analog converters, and amplifiers. It offers excellent off-state resistance, making it ideal for use in applications such as audio amplifiers and digital-to-analog converters. The device is also suitable for use as a low-power amplifier in low voltage and low power applications. Additionally, the JANTXV2N1613L FETs are suitable for use in video and oscilloscope circuits.

Working Principle

The JANTXV2N1613L FET is a voltage controlled device. The Gate of the FET is connected to an external voltage or current source, so the Gate-Source voltage controls the current flow from the Drain to the Source. The JANTXV2N1613L operates on the principle of depletion or enhancement of electrons or holes from the channel region. When a negative voltage is applied at the Gate, electrons are pushed away from the channel region, resulting in a depletion of the channel region. This reduces the conduction of electrons between the Drain and Source, and thus reduces the current flow. Conversely, when the Gate voltage is positive, electrons are pulled towards the channel region, resulting in an enhancement of the channel region and a conduction of electrons between the Drain and Source.

The Gate of the JANTXV2N1613L also has a functional input capacitance, which affects the internal capacitance of the Gate-Source junction. This internal capacitance holds charge, and it changes as the Gate voltage changes. This means that the JANTXV2N1613L FET can store charge, and this in turn affects the performance of the circuit. For example, it can affect the frequency response of the circuit, as well as the output impedance.

Conclusion

The JANTXV2N1613L is a voltage-controlled FET with many applications in electronic circuits. It has a high input impedance, making it suitable for use in voltage-controlled circuits or as a low-power amplifier. Additionally, the JANTXV2N1613L has an internal Gate-Source junction capacitance, which affects the performance of the circuit by storing charge. The JANTXV2N1613L is suitable for use in high-frequency switching circuits, digital-to-analog converters, amplifiers, audio amplifiers, and video and oscilloscope circuits.

The specific data is subject to PDF, and the above content is for reference

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