
Allicdata Part #: | 1086-20746-ND |
Manufacturer Part#: |
JANTXV2N2904 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 40V 0.6A TO-39 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 800mW Thro... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/290 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
Power - Max: | 800mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 (TO-205AD) |
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The JANTXV2N2904 is a type of single-bipolar transistor, referred to the family known as “unisonic devices” that are manufactured by Siliconix. It has been designed to support a variety of data transmission and reception applications. This unilateral device includes a base, an emitter and a collector between these terminals. In addition to this, the terminals have an integral plastic hermetically sealed package for environment protection.
The bipolar junction transistor is a commonly used device by most electronics engineers and DIYers. It is an active device, which means it requires a power source in order to operate. The most common type is the NPN – meaning its circuit symbol consists of three semicircles joined together. This type of transistor has two PN junctions of various semiconductor materials connected in the same semiconductor type. This allows the transistor to provide amplification or current switching of two signals.
In the case of the JANTXV2N2904, it is a PNP (positive and negative) device. This means, instead of the three semicircles, they are joined together as two lines. This allows the device to control an increased current effectively as two adjacent electrons are gaining energy, this in turn increases the number of electrons within a particular channel. Therefore when applying a voltage to the base, the current is multiplied across the collector and emitter respectively.
In addition to this, the device offers a wide power reproduction over a broad voltage range. This is due to the device having a breakdown voltage between the collector and base of up to 42 volts, and the emitter and base regularly reaching a maximum of 6Volts and 5 Volts, respectively. Therefore the device is suited for applications involving power switching, data transmission and reception, and voltage control.
Because the PNP transistor allows for increased current control, the device works great for high-frequency applications. This is because the structure of their characteristics inhibits the transit time of current, therefore allowing for the device to switch signals quickly and efficiently. This is beneficial when you are dealing RFI (Radio-Freqeuency Interference) and SDR (Software Defined Radio), which requires quick switching when data is received and transmitted.
The transistor is also capable of working with both AC and DC voltages and has the ability to handle currents of up to 100 mA. This means it can be used for a variety of signal amplifiers, switching circuits and other applications that need a heightened level of surface mount integration. The device also has a low noise temperature of 30Hz, which further improves its efficiency.
Overall, the JANTXV2N2904 is capable of handling a variety of applications that involve signal switching and transmission/reception at a heightened frequency. Its low noise temperature, breakdown voltage and zero voltage switching give it an advantage over some of its counterparts. In addition, the device is able to handle up to 100mA and can operate both DC and AC voltages.
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