Allicdata Part #: | 1086-20793-ND |
Manufacturer Part#: |
JANTXV2N3418 |
Price: | $ 19.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 60V 3A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 1W Through Ho... |
DataSheet: | JANTXV2N3418 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 17.73160 |
Series: | Military, MIL-PRF-19500/393 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 5µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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The JANTXV2N3418 belongs to the class of bipolar junction transistors (BJT). It is a single transistor, which is commonly used in circuits that require high precision amplifiers and switches. The JANTXV2N3418 is a monolithic epitaxial planar structure, which is fabricated by the deposition of silicon and gallium arsenide substrate on a single wafer. It is capable of handling high frequencies, and can be used for a wide range of applications.
The JANTXV2N3418 is mainly used for amplifier and switching applications. Its low noise gain stage and high precision current source allow it to be used in audio and instrumentation systems, such as amplifiers and mixers. Since the transistor can accurately control the level and intensity of signals, it has various applications in communication systems and data acquisition systems. Furthermore, the transistor is also used for home and commercial audio systems for its superior sound quality.
The working principle of JANTXV2N3418 lies in the structure of the transistor itself. A bipolar junction transistor consists of two diodes connected in a back-to-back configuration and a common base between the two diodes. When a small current is applied to the base of the transistor, it allows a larger current to flow through the two diodes. This current flows through the collector and emitter of the transistor and forms the output of the device.
The performance and characteristics of JANTXV2N3418 are mainly dependant on the biasing and emitter-collector current. This function is governed by the bias of the transistor which is set by the voltage at the base. The bias of the transistor will determine the features such as gain, output power, and output impedance. Also, the applications and specifications of JANTXV2N3418 are based on the bias voltage.
The electrical characteristics of the JANTXV2N3418 include current gain, cutoff frequency, saturation voltage, frequency response, output resistance, and temperature coefficient. The maximum current gain of the transistor is about 600. The dc cutoff frequency is around 8 MHz, with a minimum cutoff voltage of 4V. The output voltage, power dissipation, and saturation voltage will vary depending on the current gain.
The mechanical characteristics of JANTXV2N3418 are also important. The transistor is available in a standard TO-222 plastic package. It has a maximum heat dissipation of 2W, which means it can withstand high power ratings. It has a wide temperature range, from -40°C to +85°C. The package size is 4.3mm x 7.3mm x 5.1mm (L x W x H).
Overall, JANTXV2N3418 is a high quality and reliable single bipolar junction transistor. It provides excellent performance in high-frequency amplifier and switch applications. It has superior electrical and mechanical characteristics and can be used in various applications. It is suitable for use in audio, instrumentation, communication, and data acquisition systems.
The specific data is subject to PDF, and the above content is for reference
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