Allicdata Part #: | 1086-20796-ND |
Manufacturer Part#: |
JANTXV2N3418S |
Price: | $ 18.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 60V 3A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 1W Through Ho... |
DataSheet: | JANTXV2N3418S Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 17.12490 |
Series: | Military, MIL-PRF-19500/393 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 5µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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.JANTXV2N3418S is a high-power, high-frequency NPN transistor, widely used in many applications to achieve high-temperature, medium-power or low-noise performance. It is in a three-pin construction compatible with any other three-pin NPN device and is optimized for high gain. This is the most popular transistor for medium-power and high-frequency applications such as audio amplifiers, radio frequency (RF) amplifiers, and microwave oscillators.
The JANTXV2N3418S device operates as an NPN, also known as a bipolar junction transistor (BJT) due to its use of two p-type and two n-type semiconductor materials to create a three-terminal device. In the NPN configuration, electrons are injected into the emitter, which then move and are attracted to the positively-charged collector, thus forming the current flow. The base terminal allows the device to be switched on and off, as adjusting voltage at the base can give rise to changes in the current between the collector and the emitter.
In an amplifier circuit, the JANTXV2N3418S is typically used as a voltage-controlled current amplifier, in which the voltage across the base-emitter terminal causes a corresponding current to flow from the collector to the emitter. The device is also used in many applications such as power amplifiers, amplifiers and switches, oscillators, amplifiers, tuners, multiplexers, varactors and digital logic. Furthermore, the combination of its low noise, high power supply operation and wide bandwidth makes it particularly suitable for use in high-frequency communications, including terrestrial, satellite and microwave systems.
It can also be used in switchmode circuits, such as those in cellular telephones, PABX systems, switching power supplies and motor control circuits. As the device can handle 1A of continuous collector current, with a peak current of 3A, it is ideal for high-power applications. Additionally, the very high hFE (current gain) at room temperature makes it suitable for low-power, low-voltage applications such as discrete power amplifiers and audio circuits.
The NPN construction, combined with the JANTXV2N3418S, gives several unique benefits. The first is that it allows high current gain and the ability to control gain. Its high-frequency characteristics allow it to operate at high speeds and to pass high-frequency signals with minimal distortion. Furthermore, it provides low noise and good immunity to thermal effects. Additionally, its short turnaround time allows the device to be used in a wide range of applications, as its performance is not overly affected by environmental factors such as temperature.
In summary, the JANTXV2N3418S is a high-power, high-frequency NPN transistor. Its three-pin construction, combined with its high current gain, high-frequency characteristics, low noise and immunity to thermal effects, make it suitable for a wide range of applications, ranging from audio amplifiers and radio frequency amplifiers, to switchmode circuits and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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