
Allicdata Part #: | 1086-3077-ND |
Manufacturer Part#: |
JANTXV2N3501 |
Price: | $ 13.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 150V 0.3A |
More Detail: | Bipolar (BJT) Transistor NPN 150V 300mA 1W Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 11.96220 |
Series: | Military, MIL-PRF-19500/366 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 15mA, 150mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 (TO-205AD) |
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JANTXV2N3501 is a bipolar junction transistor, or BJT, designed as a single-gate device. The purpose of this transistor is to provide an efficient way of amplifying analog signals in electronics systems. This device is commonly used in motor and motor-driver, LED lighting, relay driver, audio and video amplifier and other general purpose amplifier applications.
A transistor is a three-terminal device that has the ability to control the current flow between two of its terminals. It is made up of three layers of semiconductor material, each layer having its own type of charge carriers. The BJT, specifically, has two p-n junctions sharing the same gate.
The JANTXV2N3501 is made up of two n-type sections and a single p-type section, making it an NPN transistor. Its gate is EBC, meaning it has an electrically-biased collector. The collector is the terminal a current enters, and the base is used to control the amount of current flowing into the collector. The emitter is the terminal current exits, and is always connected to the negatively-charged source.
The JANTXV2N3501 is a low-noise, linear device that can be used as an amplifier in a wide variety of applications. It is capable of handling up to 700 mA of current, and its maximum drain efficiency is 75%. In addition, it is capable of rejecting out-of-band interference, making it perfect for low-frequency applications such as automotive systems, TVs and media players.
The device has a maximum operating temperature of 150°C and a storage temperature range between -20 to +150°C. It has a standard package size of TO-220, and its output impedance is anywhere between 30 and 300 mΩ, depending on the load conditions.
The working principle of the JANTXV2N3501 is based on the transistor configuration. When the base of the device is connected to a positive voltage, electrons flow from the emitter to the collector through the base, allowing a current to flow from the collector to the emitter. This current is amplified by the transistor.
The JANTXV2N3501 has a variety of applications. It can be used as a switch in motor control circuits to control the flow of current, or as an amplifier in audio and video systems to increase the volume of the signal. Additionally, it can also be used as an amplifier in relay driver applications to boost the current output of a relay.
In summary, the JANTXV2N3501 is a low-noise, linear bipolar junction transistor that can be used as a switch or an amplifier in a wide range of applications. It has a maximum operating temperature of 150°C and an output impedance of between 30 and 300 mΩ, depending on the load conditions. Its collector is electrically biased, and it is capable of rejecting out-of-band interference for low-frequency applications.
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