JANTXV2N3501UB

Series:	Military, MIL-PRF-19500/366
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	300mA
Voltage - Collector Emitter Breakdown (Max):	150V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 15mA, 150mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, No Lead
Supplier Device Package:	UB

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Introduction

JANTXV2N3501UB is a high performance, high voltage silicon NPN bipolar power transistor utilizing the advanced oxide passivation process to obtain the desired performance and reliability. It is a single piece construction transistor, suitable for high pulse and linear amplifier applications where high breakdown voltage is required. The JANTXV2N3501UB is a perfect choice for applications in automotive, industrial, audio and video devices.

Field of application

The JANTXV2N3501UB is a high voltage and very high power bipolar transistor ideal for applications where high breakdown voltages are required. Applications include high pulse, pulse audio amplifiers, switching circuits with high voltage transient suppression, high reliability linear amplifiers, class AB amplifiers, automotive and industrial systems. Additionally, the device is suitable for pre-driver circuits and is ideal for applications in audio or video circuitry, automotive, and industrial systems.

Working Principle

The JANTXV2N3501UB is a single piece bipolar junction transistor (BJT) that operates like a double-base amplifier. This type of transistor has two p-type semiconductor layers and one n-type layer between them. The center layer of n-type semiconductor material creates an n-type region. This n-type layer is connected to one side of the p-type base, while the other side is connected to the collector, meaning that when the base-collector voltage is applied the device is conducting. When the base-emitter voltage is applied, it causes a current to flow from the emitter to the collector. This current causes an electron depletion region to form between the emitter and collector, allowing for the current to flow from the emitter to the collector. When the base-collector voltage is reduced, the depletion region decreases, resulting in a decrease in current flow. The amount of current flowing in the collector can be controlled by adjusting the base-emitter voltage. This type of transistor is used as amplifiers and switches in various electronic circuits.

Summary

In summary, the JANTXV2N3501UB is a high performance, high voltage silicon NPN bipolar power transistor utilizing the advanced oxide passivation process. Due to its high breakdown voltage, it is suitable for applications in automotive, industrial, audio, and video devices where high voltage transients and linear amplifiers requiring high reliability are needed. It is capable of operating as a double-base amplifier and working principle shows that the current between the collector and emitter can be controlled by adjusting the base-emitter voltage.

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