JANTXV2N3960UB

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A JANTXV2N3960UB transistor is a Bipolar Junction Transistor (BJT) type of semiconductor device. It is an example of a single-type BJT, consisting of one P-type and one N-type base. The JANTXV2N3960UB is designed for use in high-frequency applications and operates with a collector-emitter voltage of 12 volts and an emitter-base voltage of 5 volts. It has a power-dissipation rating of 175mW and a forward-current gain of 15mA/V.

The JANTXV2N3960UB has a wide range of applications, particularly in circuits for short-range radio communications and wireless systems. This type of BJT can be used as an amplifier, switch, mixer or frequency converter, as well as a high-temperature power amplifier. It is suitable for a range of applications including transceivers, radios, GPS systems, automotive electronics and audio amplifiers.

The JANTXV2N3960UB works by using bipolar junction technology. Its operations are based on the movement of electrons, which are driven by the voltage established between the collector and emitter. This voltage produces a field across the emitter-base junction that allows electrons to travel into the base-region. In turn, the base region is then filled with holes, the majority of which will travel through the collector region and a few to the emitter. The result is a current flowing from the collector-emitter junction.

In addition, the JANTXV2N3960UB has an integrated high-current gain. This means that it can amplify or reduce a given range of input signals, allowing for greater control over the output. In particular, it can be used to increase the signal strength of an input, making it suitable for use in digital radio systems.

The JANTXV2N3960UB is designed to be robust and reliable. It has the ability to with stand high temperatures, making it suitable for use in various home and industrial applications. It is also resistant to radiation and has a long operating life.

The JANTXV2N3960UB transistor is a highly reliable and versatile single-type BJT. It has a wide range of applications, particularly in high-frequency systems. Its operations are based on the movement of electrons and its integrated high-current gain make it ideal for use in digital radio systems. Its robustness and resistance to high temperatures make it suitable for use in home and industrial applications.

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