JANTXV2N3997 Allicdata Electronics
Allicdata Part #:

1086-20948-ND

Manufacturer Part#:

JANTXV2N3997

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 10A TO111
More Detail: Bipolar (BJT) Transistor NPN 80V 10A 2W Chassis, ...
DataSheet: JANTXV2N3997 datasheetJANTXV2N3997 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/374
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: TO-111-4, Stud
Supplier Device Package: TO-111
Description

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The JANTXV2N3997 is a high-power bipolar junction transistor (BJT). It is typically used in high-current applications that require a high speed of switch on or off. It has wide bandwidth and excellent linearity, making it well suited for applications where high-frequency switching is required. The JANTXV2N3997 has a high-power rating of 180 V/250 mA and can switch frequencies up to 5 GHz.

Applications

The JANTXV2N3997 is an NPN BJT with a wide range of applications. The device is commonly used in automotive, high voltage, audio, and radio frequency (RF) applications.

  • Automotive applications: The JANTXV2N3997 can be used in ignition systems, power door locks, HVAC systems, and idle control systems.
  • High voltage applications: The device is well suited for high voltage applications such as power supplies and electric motors.
  • Audio applications: The JANTXV2N3997 can be used in amplifiers, equalizers, and pre-amplifiers.
  • Radio frequency applications: The BJT can be used in switched-mode power supplies, RF amplifiers, and gain control circuits.

Working Principle

A bipolar junction transistor (BJT) consists of three regions that are interconnected. The regions are the emitter, collector, and base. The emitter is the source of electrons and the collector region is the sink. The current flow is regulated by the base.

The JANTXV2N3997 is an NPN BJT, which means that the emitter and collector are connected together to form an N type semiconductor. When current is applied to the base, the N type semiconductor is forward biased and electrons flow from the emitter to the collector. This forward biasing also allows holes from the base region to travel to the collector region and complete the current flow.

The current flow is controlled by varying the voltage on the base and by changing the relative sizes of the emitter, collector, and base regions. The JANTXV2N3997 has a wide frequency response, allowing the device to be used in applications requiring fast switching speeds.

Conclusion

The JANTXV2N3997 is a high-power bipolar junction transistor (BJT). It is typically used in high-current applications that require a high speed of switch on or off. It has wide bandwidth and excellent linearity, making it well suited for applications where high-frequency switching is required. The JANTXV2N3997 is most commonly used in automotive, high voltage, audio, and radio frequency (RF) applications.

The current flow through the BJT is regulated by the base and is controlled by varying the voltage on the base and by changing the relative sizes of the emitter, collector, and base regions. The JANTXV2N3997 has a high-power rating of 180 V/250 mA, allowing it to be used in a wide variety of applications, and can switch frequencies up to 5 GHz.

The specific data is subject to PDF, and the above content is for reference

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