JANTXV2N3998

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JANTXV2N3998 is a bipolar junction transistor (BJT) usually used as a single device. It is produced to meet the requirements of industrial and military grade applications with a wide range of applications like high voltage switching, small signal amplification and general purpose switching.

The JANTXV2N3998 is designed with three leads (base, emitter, and collector) and is made of N-type silicon. It is built with a silicon epitaxial planar structure and offers low voltage operation, high frequency operation, medium power rating and low distortion.

The JANTXV2N3998 is used in a wide range of applications, most notably as a medium power amplifier and switching device. It is an important component used in power supplies, radio frequency (RF) power amplifiers, power control circuits and frequency control circuits. It is often used in audio amplification, automotive electronics, and even industrial grade instruments.

The working principle of the JANTXV2N3998 is based on the fact that the current flow through the transistor’s three terminals (base, emitter and collector) is proportional to the voltage applied to the base. When a voltage is applied to the base, a current is induced in the emitter and collector. The collector terminal has a larger voltage than the emitter terminal, thereby creating a voltage differential known as the "base-emitter voltage". This voltage differential creates a field of electrons that can be used to drive the transistor\'s operation.

The base-emitter voltage is the most critical parameter controlling the operation of the transistor. The base current must be controlled so that the base-emitter voltage does not exceed the manufacturer\'s specifide range of values. The base current is also important for controlling the collector current, which is the amount of current that is flowing into and out through the collector.

The collector current is also related to the amount of power that the transistor can handle. The higher the collector current, the higher the level of power the transistor can handle. The power rating of the transistor can be calculated by multiplying the collector current by the collector-emitter voltage.

The transistor’s performance is also affected by temperature variations, so it is important to select a device with a maximum temperature range that matches the specific application. The rated power dissipation must also be taken into account to ensure the proper performance of the device.

The JANTXV2N3998 is an excellent choice for a wide range of applications due to its broad application field and its simple working principle. It offers low voltage operation, high frequency operation, medium power rating and low distortion, making it suitable for many industrial and military grade applications.

The specific data is subject to PDF, and the above content is for reference