JANTXV2N4238 Allicdata Electronics
Allicdata Part #:

1086-20974-ND

Manufacturer Part#:

JANTXV2N4238

Price: $ 37.84
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 60V 1A TO39
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 1W Through Ho...
DataSheet: JANTXV2N4238 datasheetJANTXV2N4238 Datasheet/PDF
Quantity: 1000
100 +: $ 34.39640
Stock 1000Can Ship Immediately
$ 37.84
Specifications
Series: Military, MIL-PRF-19500/581
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Description

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The JANTXV2N4238 is a single, high-speed, PNP silicon bipolar transistor that was primarily designed for use in military and aerospace applications. With its advanced technology, it provides superior performance and reliable operation in high-temperature and high-frequency conditions. The JANTXV2N4238 is designed for use in numerous applications including amplifiers, analog-to-digital and digital-to-analog converters, oscillators, and high-speed switching. It is also suitable for operation in the frequency range from 10kHz to 200MHz.

The JANTXV2N4238 is a three-terminal device and is composed of a single NPN or PNP epitaxial transistor. This device offers excellent current gain and fT figures and relatively low noise figures. It also has a very low collector-base capacitance, allowing for high-switching speeds. Its collector-base capacitance also aids in keeping the output impedance low and results in a lower input impedance than traditional junction transistors.

The JANTXV2N4238 is composed of three distinct parts: the emitter, collector, and base. The collector is usually connected to the negative terminal of the supply voltage and the base to the positive terminal. The emitter is then biased with a relatively small amount of current. This causes current to flow from the collector to the base and then, to the emitter. By controlling the amount of current supplied to the base, the JANTXV2N4238 is able to control the current flow from the collector to the emitter. It is possible to increase or reduce the current flow by varying the voltage applied to the base.

The JANTXV2N4238 has a reverse-biased base-emitter junction, allowing the collector current to be controlled by the amount of emitter current. The reverse-biased base-emitter junction also provides the device with a substantial amount of current gain, also known as hFE. This gives the JANTXV2N4238 the ability to efficiently control the collector current, while also providing an adequate output stage (thermal and DC) when used in an amplifier.

The JANTXV2N4238 can also be used in various switching applications, such as in the implementation of logic gates, frequency multipliers, and pulse-width modulation circuits. It is well suited for applications that require high-speed operation and reliable performance in difficult environmental conditions. It can also operate at high temperatures, making it suitable for use in military and aerospace applications. Because of its exceptional performance and reliability, the JANTXV2N4238 is a popular choice among engineers for a wide range of military and aerospace applications.

In conclusion, the JANTXV2N4238 is a high-speed, PNP silicon bipolar transistor designed for use in numerous applications. It is composed of three distinct parts: the emitter, collector, and base. Its reverse-biased base-emitter junction provides the device with a substantial amount of current gain, allowing it to efficiently control the collector current. It is suitable for operation in the frequency range from 10kHz to 200MHz and can also be used in various switching applications. Due to its exceptional performance and reliability, it is highly sought after by engineers for a wide range of military and aerospace applications.

The specific data is subject to PDF, and the above content is for reference

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