JANTXV2N4261 Allicdata Electronics
Allicdata Part #:

1086-20980-ND

Manufacturer Part#:

JANTXV2N4261

Price: $ 28.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 15V 0.03A TO-72
More Detail: Bipolar (BJT) Transistor PNP 15V 30mA 200mW Throu...
DataSheet: JANTXV2N4261 datasheetJANTXV2N4261 Datasheet/PDF
Quantity: 1000
100 +: $ 25.97340
Stock 1000Can Ship Immediately
$ 28.57
Specifications
Series: Military, MIL-PRF-19500/511
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72
Description

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The JANTXV2N4261 transistor is a single bipolar junction transistor (BJT), and is used in a wide range of applications. The JANTXV2N4261 is a small-signal NPN BJT, with a current gain hFE of around 100-400, a collector-emitter voltage of up to 60V, and a foward current gain of up to 5%.

The JANTXV2N4261 is typically used for amplification and switching applications, such as in feedback amplifiers, drivers, and power amplifiers. It is well-suited for applications with strict power requirements, such as portable audio equipment. The JANTXV2N4261 can also be used for a variety of other components, including voltage regulators, oscillators, and power supplies.

The JANTXV2N4261 BJT works on the basis of a two-terminal current-controlled device, with a base, collector, and emitter. It relies on a small current applied to the base in order to control the flow of current from the collector to the emitter. It also relies on the base-emitter junction, which is essentially a PN junction diode, to control the amount of current that can flow.

Essentially, when a current is applied to the base, it creates an electron flow in the base region, which in turn creates a current flow in the collector region. This is known as the saturation region, where the transistor is said to “switch on” and the collector current is said to be at its maximum.

When the current is removed from the base region, the transistor is said to be in the cut-off region, and the collector current falls to zero. Also, the base-emitter junction creates a certain level of resistance, and this further helps to control the current flow in the collector-emitter region.

In summary, the JANTXV2N4261 is a single NPN bipolar junction transistor (BJT) that is used for a range of amplification, switching, and power applications. It works by using a small current applied to the base region to control a larger collector current, with the help of the base-emitter junction diode. Its high gain and low operating power requirements make it well-suited for applications with strict power requirements, such as portable audio and voltage regulator applications.

The specific data is subject to PDF, and the above content is for reference

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