JANTXV2N4261UB Allicdata Electronics
Allicdata Part #:

1086-20984-ND

Manufacturer Part#:

JANTXV2N4261UB

Price: $ 29.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 15V 0.03A
More Detail: Bipolar (BJT) Transistor PNP 15V 30mA 200mW Surfa...
DataSheet: JANTXV2N4261UB datasheetJANTXV2N4261UB Datasheet/PDF
Quantity: 1000
100 +: $ 27.15790
Stock 1000Can Ship Immediately
$ 29.88
Specifications
Series: Military, MIL-PRF-19500/511
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Description

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The JANTXV2N4261UB is a medium-to-high speed, medium power NPN bipolar junction transistor (BJT) with a medium gain. It is a single transistor and forms part of a family of BJTs that is characterized by its large current gain (hFe) and low collector-emitter saturation voltage. This BJT is compatible with a wide range of other families, such as Darlington and Power BJTs, and can be used for a variety of applications.

JANTXV2N4261UB transistors are typically used in switching circuits, due to their large current gain with a low base current. This makes them an excellent choice for power supply switching applications and are particularly useful in switching AC power from 110-220VAC. When used with a saturable core, this transistor can also be used for pulse width modulation (PWM) control, where the duty cycle of high-current pulses is adjusted.

This transistor is also suitable for digital logic circuits. With the low collector-emitter saturation voltage, it works well in a the high impedance circuit, can be used in multiplexer circuits, and is especially useful as an interface between high and low impedance logic. The low collector-emitter saturation voltage also makes this transistor an ideal selection for switching circuits with optical isolators.

The JANTXV2N4261UB consists of a NPN transistor in a TO-220 package, with contact pins for the collector, the base, and the emitter. When current passes through the transistor, electrons move from the emitter to the collector, turning on the transistor and allowing current to flow from the collector to the base. The gain (hFe) of the transistor is determined by the current ratio between the collector and the base.

When operating in saturation, this transistor has a low Collector-Emitter saturation voltage and can provide high current gains. This makes it ideal for high current switches. Its low switching time also makes it ideal for applications where faster switching times are required.

The JANTXV2N4261UB can be used in a variety of applications, ranging from digital logic circuits to power amplifiers. Its large current gain and low collector-emitter saturation voltage make it a great choice for high current, high speed applications. With its low collector-emitter saturation voltage, it is well-suited for switching applications where AC power is being switched from 110-220VAC. It can also be used for pulse width modulation and for digital multiplexer circuits where high impedance logic input is needed.

The specific data is subject to PDF, and the above content is for reference

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