JANTXV2N5002 Allicdata Electronics
Allicdata Part #:

1086-21000-ND

Manufacturer Part#:

JANTXV2N5002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 5A TO59
More Detail: Bipolar (BJT) Transistor NPN 80V 5A 2W Chassis, S...
DataSheet: JANTXV2N5002 datasheetJANTXV2N5002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/534
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59
Description

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JANTXV2N5002 is a kind of bipolar junction transistor (BJT) that is used for a variety of applications. It is a three-terminal device composed of a base, a collector and an emitter, and when it is being used, all of the three terminals are connected to appropriate circuit parts, allowing the transport of electricity between them. It has superior performance in terms of current gain, frequency response, and voltage breakdown limit, and also contains an intrinsic diode, which helps prevent reverse current.

The JANTXV2N5002 is mainly used in applications that require higher current gain, such as audio, amplifier, switching, and low-noise preamplifier circuits, and it can also be used as a switch in circuits. Furthermore, it can be used as a linear amplifier that can be used to amplify signals with low distortion.

The working principle of the JANTXV2N5002 is based on the fact that when the base-to-emitter voltage increases, the collector current also increases. This happens because the base-to-emitter voltage serves as the activation voltage, allowing the electrons to move from the emitter to the collector. This movement of electrons produces the collector current. This current can then be amplified by increasing the magnitude of the base-to-emitter voltage. By doing so, the collector current can be increased to the desired level.

When it comes to the power dissipation levels of the JANTXV2N5002, it can withstand a maximum collector current of 5 Amps and has a power dissipation rate of about 200 mW. The voltage rating for the JANTXV2N5002 is also quite high, with a maximum collector-to-emitter voltage of 25 Volts. It also has a low leakage current, which helps to reduce the amount of power wasted during operation.

In conclusion, the JANTXV2N5002 is a kind of bipolar junction transistor that is mainly used for applications requiring higher current gain, such as audio amplifiers, switching, and low-noise preamplifier circuits. It has superior performance in terms of current gain, frequency response, and voltage breakdown limit and also features a maximum collector current of 5 Amps and a low leakage current. Furthermore, it is also quite easy to use and understand, making it an ideal choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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