| Allicdata Part #: | 1657-1225-ND |
| Manufacturer Part#: |
JANTXV2N5153L |
| Price: | $ 16.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | M/A-Com Technology Solutions |
| Short Description: | DIODE |
| More Detail: | Bipolar (BJT) Transistor PNP 80V 2A 1W Through Ho... |
| DataSheet: |  JANTXV2N5153L Datasheet/PDF |
| Quantity: | 100 |
| 1 +: | $ 15.15150 |
| 10 +: | $ 14.01250 |
| 100 +: | $ 11.96720 |
| Series: | Military, MIL-PRF-19500/545 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 80V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max): | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 2.5A, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package: | TO-5 |
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The JANTXV2N5153L is a type of NPN BJT (negative-positive-negative bipolar junction transistor). It belongs to the family of BJTs and is classed as single-package transistor. BJTs are three-terminal semiconductor devices made from an N-doped material, a P-doped material, and a connection between them. Generally, they are used to amplify and switch electronic signals, as well as regulating current flow in circuits.
The JANTXV2N5153L has a maximum collector current of 400 mA and a voltage gain of 40V/V. Its operating temperature ranges from -55℃ to +150℃ and its power dissipation is up to 2W. It also has a collector-emitter breakdown voltage of 40V and a collector-base breakdown voltage of 70V.
The JANTXV2N5153L is widely used in many electronic applications, such as in small audio amplifiers, low-power radio-frequency amplifiers, voltage regulators, etc. It is also used in controlling relays, power management circuits, and general switching applications. Furthermore, the JANTXV2N5153L is also used for switching regulated power in many industrial and automotive applications.
The JANTXV2N5153L works on the principal that current can flow from the base to the emitter, when activated by the external voltage. This base current triggers the collector current, which is initially low in value, but increases exponentially as the base current continues to be driven in. Ultimately, the collector current reaches its maximum value, and this is detected by the voltage. The voltage then rises, and hence the base current is reduced until it reaches zero. This process continues and repeats itself, and it can be used to control devices and switches.
In conclusion, the JANTXV2N5153L is a type of bipolar junction transistor (BJT). It belongs to the family of NPN BJT and is classed as single-package transistor. It has a maximum collector current of 400 mA and a voltage gain of 40V/V with a temperature range from -55℃ to +150℃. Additionally, its power dissipation is up to 2W and its collector-emitter breakdown voltage is 40V and collector-base breakdown voltage is 70V. This type of semiconductor device is used in many electronic applications, such as in small audio amplifiers, power management circuits and voltage regulators. Moreover, it works on the principle that current can flow from the base to the emitter, when activated by the external voltage.
The specific data is subject to PDF, and the above content is for reference
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