JANTXV2N5237 Allicdata Electronics
Allicdata Part #:

1086-21034-ND

Manufacturer Part#:

JANTXV2N5237

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 120V 10A TO-5
More Detail: Bipolar (BJT) Transistor NPN 120V 10A 1W Through ...
DataSheet: JANTXV2N5237 datasheetJANTXV2N5237 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/394
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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The JANTXV2N5237 is categorized under transistors – bipolar (BJT) – single. It is a N-channel depletion, vertical DMOS transistor usually used in high and low voltage switch, linear and low noise amplifier applications as well as in integrator circuits. It is suitable for high voltage, low current, low noise and power amplifier applications.

The most important characteristics of JANTXV2N5237 are its large voltage range, high current capacity, low thermal impedances and high breakdown voltage. It is available in hermetic and surface mount packages, with the C–series quad flat packages being the most popular.

In terms of its basic construction, the JANTXV2N5237 consists of three N-channel depletion DMOS transistors having a common gate and common drain. It also contains a common source (which forms the output) and a substrate (the power supply) into which the three transistors are diffused. The gate of the transistor is connected to the common source, the substrate forms the drain and the drain is connected to the common gate.

In terms of its working principle, the JANTXV2N5237 works in a similar way to a bipolar junction transistor. A small voltage on the gate-to-source node results in a large current flow between the drain and source. This current flow can be used to switch on and off other components in the circuit, making it ideal for applications such as switching, linear amplifiers, power amplifiers and integrator circuits.

The JANTXV2N5237 is used in a wide variety of applications, such as high or low voltage switching, high power linear amplifiers and low noise amplifiers. It can also be used in wireless communication applications, such as mobile phones and GPS systems. Additionally, it can be used in low-power, low-impedance devices such as photodiodes and solar cells.

The JANTXV2N5237 is an excellent choice for high voltage applications due to its high current capacity and low thermal impedances. It is also a reliable and versatile device, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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