JANTXV2N5238S

Series:	Military, MIL-PRF-19500/394
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	170V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 1A, 10A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 5A, 5V
Power - Max:	1W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39 (TO-205AD)

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The JANTXV2N5238S is a bipolar junction transistor (BJT) designed for high voltage switching applications. It has a current gain of 820 and a voltage rating of 250V, making it suitable for power supplies and low-noise circuits. The JANTXV2N5238S is available in both surface-mount and through-hole packages.The JANTXV2N5238S is a modern NPN silicon transistor. It utilizes a low-voltage silicon epitaxial substrate and a PN junction. This junction creates a breakdown voltage of 6.5 volts or higher. The JANTXV2N5238S has a typical current gain of 820 and a maximum voltage rating of 250V. The transistor also has a maximum collector current of 3A and a maximum power dissipation of 625mW.The JANTXV2N5238S is used in many applications such as audio amplifiers, voltage switch power supplies, high-frequency switching, and low-noise circuits. In audio amplifiers, the JANTXV2N5238S can drive a power output of up to 60W with a low distortion level. The transistor is also suitable for high-frequency switching applications due to its high voltage breakdown voltage and fast switching speed.One key aspect of the operation of the JANTXV2N5238S is its working principle. When the JANTXV2N5238S is in the OFF state, both the collector and emitter terminals are reverse biased. This means that there is no current flowing through the transistor. When a potential is applied to the base of the JANTXV2N5238S, the base-emitter voltage increases, which results in a decrease in the collector-emitter junction reverse bias and an increase in the current through the transistor. This increase in current is referred to as the "gain" of the transistor. The current gain of the JANTXV2N5238S is 820.The high current gain of the JANTXV2N5238S makes it an excellent choice for building audio amplifiers, switching power supplies and other low-noise circuits. The high voltage breakdown rating of the JANTXV2N5238S also means that it can be used in a wide range of switching applications. The JANTXV2N5238S is also easy to use due to its easy to solder through-hole and surface-mount packages. In summary, the JANTXV2N5238S is a high-performance bipolar junction transistor (BJT) designed for high voltage switching applications. It utilizes a low-voltage epitaxial substrate and a PN junction in order to achieve a current gain of 820 and a maximum voltage rating of 250V. It is available in both surface-mount and through-hole packages and is suitable for use in many applications such as audio amplifiers, voltage switch power supplies and high-frequency switching.

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